TDZTR5.6 Discrete Semiconductor Products |
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Allicdata Part #: | TDZTR5.6TR-ND |
Manufacturer Part#: |
TDZTR5.6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 5.6V 500MW TUMD2 |
More Detail: | Zener Diode 5.6V 500mW ±10% Surface Mount TUMD2 |
DataSheet: | TDZTR5.6 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±10% |
Power - Max: | 500mW |
Current - Reverse Leakage @ Vr: | 10µA @ 2.5V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2 |
Base Part Number: | TDZ5V6 |
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Diodes are used in a variety of applications, from circuit protection to thermal control. Zener diodes, in particular, are used for their unique ability to maintain a constant, or near constant voltage in a circuit, even when faced with varying current, dependent on their breakdown voltage or "clamping" voltage.The TDZTR5.6 is a high power, high temperature Zener diode that offers a breakdown voltage of 5.6V. It is specially designed for high temperature applications and has an extended operating temperature range of -50°C to +150°C. It features an ultra low reverse leakage current and is AEC-Q101 qualified, making it ideal for applications including automotive circuits and aggressive ESD protection, among others.This diode is designed to maintain a stable output voltage in circuits and help protect against sudden voltage spikes. It is an unidirectional device, meaning it only allows current to flow in a single direction--from the anode to the cathode. When an over-voltage situation occurs, exponential avalanche breakdown in the diode occurs, and the diode enters a "region of modified conduction" resulting in a restricted current flow, and the breakdown voltage is maintained.TDZTR5.6 can also be used in avalanche breakdown protection circuits. Under normal conditions, the reverse biased PN junction of the device has a high resistance. However, under an overvoltage situation, the electric field across the junction increases exponentially which allows a large current to flow, limiting the amount of voltage seen across the device. This helps to protect electronic components in the circuit from overvoltage conditions.This diode can also be used as an ESD protection diode, as it has an extended operating temperature range and a low reverse leakage current. It can be placed in series with a sensitive chip or component to provide surge protection against static electricity. ESD can damage a circuit and if not addressed in time, can lead to failure of components. TDZTR5.6 helps prevent ESD induced damage in sensitive circuitry by limiting voltage on the target circuit.To sum up, TDZTR5.6 is a high power, high temperature Zener diode with a breakdown voltage of 5.6V. It is suitable for use in high temperature applications and offers protection against sudden voltage spikes and ESD. This diode is capable of maintaining a constant voltage regulation, even in varying current conditions, making it a suitable choice for automotive, wireless telecommunications, and other sensitive electronic circuits.
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