TFZVTR3.0B Discrete Semiconductor Products |
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Allicdata Part #: | TFZVTR3.0BTR-ND |
Manufacturer Part#: |
TFZVTR3.0B |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 3V 500MW TUMD2M |
More Detail: | Zener Diode 3V 500mW Surface Mount TUMD2M |
DataSheet: | TFZVTR3.0B Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.04319 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 50µA @ 1V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TFZVTR3.0B is a single Zener diode with a wide variety of applications. It has a variety of features that make it a suitable choice for many applications. One of its most important features is its low leakage current. It has an operating voltage of 3.0V with a maximum breakdown voltage of 3.45V and a minimum breakdown voltage of 2.8V. It also has a very low dynamic resistance of 0.25Ω at 1.5V. Another important feature of the TFZVTR3.0B is its low forward voltage drop. It has a maximum forward voltage drop of 0.45V at 1.5A and 0.55V at 5A. This allows for increased power efficiency in the power supply designs.
The most common applications for the TFZVTR3.0B are in power supply and motor control circuits. It is used in power supplies in order to regulate the output voltage and current. The low forward voltage drop of the device allows for efficient conversion from AC to DC power. It is also used in motor control circuits to control the speed of the motor. The TFZVTR3.0B provides an excellent choice for high-speed switching applications as the device has an excellent high frequency response. The low on-state resistance of the device also helps to reduce power loss in the circuit.
The working principle of the TFZVTR3.0B is based on the Zener Effect, which occurs when the reverse voltage of a diode is increased beyond the breakdown voltage. When the applied voltage gets too high, the electrons in the diode start to move through the depletion region, leading to the creation of a junction potential barrier. This potential barrier prevents the flow of current through the diode, thus providing voltage regulation.
The TFZVTR3.0B is an ideal choice for a variety of applications due to its low leakage current, low dynamic resistance, low forward voltage drop, and its ability to provide excellent voltage and current regulation. It is also an excellent choice for high-speed switching applications due to its excellent high frequency response. Its wide range of features makes it a suitable choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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