TFZVTR4.3B Allicdata Electronics
Allicdata Part #:

TFZVTR4.3BTR-ND

Manufacturer Part#:

TFZVTR4.3B

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 4.3V 500MW TUMD2M
More Detail: Zener Diode 4.3V 500mW Surface Mount TUMD2M
DataSheet: TFZVTR4.3B datasheetTFZVTR4.3B Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04319
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Description

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With an ever-growing need for more advanced power management solutions in the tech world, TFZVTR4.3B is a single Zener diode designed with the specific purpose of providing a quick, steady and reliable solution for power management in critical applications.

The TFZVTR4.3B is designed to be used in any application where its specifications - maximum power dissipation of 0.3W, breakdown voltage of 4.3 volts and working current of ± 65 mA - make it a viable option. This includes use in voltage regulators, voltage controlled amplifiers, clipper and clamper circuits, power converters, power supplies, low-voltage battery-operated devices, and many other regulated power applications.

As a single Zener diode, the TFZVTR4.3B works on a very simple principle - it is responsible for controlling the voltage levels throughout the circuit by “breaking down” the voltage when it exceeds a certain limit, thus preventing further damages to the device and ensuring the safety of the system and its components.

The working principle of a single Zener diode is based on the concept of a diode’s forward bias and reverse bias. The forward bias is a single stage of active relaxation in which the applied voltage is greater than the junction potential of the diode, causing the electrons to flow from the anode to the cathode. This forward bias voltage is what creates the breakdown voltage, which is the voltage at which the current starts to flow.

The reverse bias is when the applied voltage is less than the junction potential of the diode, allowing the electrons to flow from the cathode to the anode and creating a significantly larger reverse current. This reverse bias voltage is the same as the breakdown voltage and is the voltage at which the current begins to flow and the Zener diode achieves its voltage regulation.

In addition to its power management applications, the TFZVTR4.3B is also suitable for use in other applications where it can be used to provide reliable voltage control, such as in low-power load circuits. As with any other diode, the TFZVTR4.3B must be protected from excessive voltages and current to ensure its proper functioning. Overall, the TFZVTR4.3B is a quick, steady and reliable solution for power management in critical applications.

The specific data is subject to PDF, and the above content is for reference

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