Allicdata Part #: | TIP48-S-ND |
Manufacturer Part#: |
TIP48-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN 300V 1A |
More Detail: | Bipolar (BJT) Transistor NPN 300V 1A 2W Through H... |
DataSheet: | TIP48-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 300mA, 10V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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TIP48-S transistors are a member of the Single Bipolar Junction Transistor (BJT) family of components. As the name implies, this type of transistor has a single junction, connecting two emitters (E1 and E2) to a central base layer. The base layer is connected to a collector (C), which is where the output signal of the transistor is derived from. These transistors are generally used in high-frequency applications and can be found in a variety of consumer electronics devices such as amplifiers, radios, and computers.
The primary purpose of a TIP48-S transistor is to amplify a weak signal, often from an external source. The process of amplifying a signal is known as “gain.” This is accomplished by using a combination of a PNP and NPN structure. A PNP transistor has an arrangement where electrons are emitted from the base layer in response to a voltage signal, while an NPN transistor carries a current through the base layer in response to a voltage signal. When combined, these two structures combine to amplify the weak signal.
The TIP48-S transistor operates in a Class A configuration. This means that the device is capable of providing a high output signal while maintaining a constant current flow. This makes the TIP48-S ideal for applications where a large amount of power is needed, such as in high-power radio transmitters.
The key performance metrics of a TIP48-S transistor include its gain and power dissipation. Gain is the measure of how well the device amplifies the input signal. The power dissipation is the amount of power dissipated by the device when it is actively amplifying an incoming signal. The higher the gain, the greater the power dissipated by the device, so high gain transistors such as the TIP48-S must be designed to efficiently dissipate the large amount of power they generate.
The TIP48-S transistor has numerous applications in a variety of electronic projects, most notably in radio frequency (RF) amplifiers. The device is capable of providing a high gain and efficiency, as well power dissipation, making it ideal for these applications. In addition, the TIP48-S transistor is ideal for use in audio amplifiers, as well as power amplifiers. Its high current gain capability makes it an excellent choice for powering audio circuits.
In addition to its high gain and power dissipation capabilities, the TIP48-S transistor is also highly robust. Due to its small size and wide operating temperature range, the device can operate in extreme environmental conditions. As such, it is well-suited for use in military applications as well as in commercial applications.
Overall, the TIP48-S is an excellent choice for high-frequnecy applications, providing users with a high-gain and efficient transistor solution. With its wide operating temperature range, robust construction, and impressive power dissipation, the TIP48-S can be used in a variety of projects and devices. As such, it continues to be an integral part of many electronic projects today.
The specific data is subject to PDF, and the above content is for reference
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