TISP4125H3BJR-S Allicdata Electronics
Allicdata Part #:

TISP4125H3BJR-STR-ND

Manufacturer Part#:

TISP4125H3BJR-S

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: PROTECTOR SINGLE BIDIRECT 125V
More Detail: N/A
DataSheet: TISP4125H3BJR-S datasheetTISP4125H3BJR-S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 125V
Voltage - Off State: 100V
Voltage - On State: 3V
Current - Peak Pulse (8/20µs): 300A
Current - Peak Pulse (10/1000µs): 100A
Current - Hold (Ih): 150mA
Number of Elements: 1
Capacitance: 74pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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TISP4125H3BJR-S application field and working principle

Thyristors, also known as SCRs, are semiconductor devices that can be used in a wide range of applications. The TISP4125H3BJR-S is a medium-power thyristor with a rated junction temperature of up to 175°C, a maximum repetitive reverse voltage of 600V and a surge peak on-state current of up to 16A.

The TISP4125H3BJR-S boasts a range of features that make it suitable for a variety of applications. Its low forward voltage drop is ideal for use in high-efficiency converters, and its high commutation performance makes it suitable for use in fast switching applications such as AC power control. Its low stray inductance makes it suitable for use in applications such as smart motor control, and its low on-state voltage makes it well suited for use in low power sensitive applications.

The working principle of the thyristor is relatively simple. A thyristor is a three-terminal semiconductor device that is composed of two PN junctions connected in series with a PN connection in the middle. The three junctions are of opposite polarity and the current through each junction is regulated by the voltage applied to the gate terminal.

When a voltage is applied to the gate terminal, it begins to forward bias the junction nearest to it which causes a current to flow through the device. This current then continues to flow through the device until the voltage applied to the gate is removed. Once the voltage is removed, the device stops conducting and the current flow ceases. This is known as the \'latching\' effect of thyristors.

As such, the TISP4125H3BJR-S is an ideal option for applications such as AC and DC motor control, high voltage rectifier circuits, and high frequency switching. It is also well suited for use in applications such as battery management systems, high current power supplies, and high voltage switching.

The TISP4125H3BJR-S is a versatile and reliable device that can be used in a wide range of applications. Its low forward voltage drop, high commutation performance, and low stray inductance make it suitable for use in a variety of applications. Additionally, its low on-state voltage makes it an ideal option for sensitive applications requiring precise control.

The specific data is subject to PDF, and the above content is for reference

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