TISP5080H3BJR Allicdata Electronics
Allicdata Part #:

TISP5080H3BJR-ND

Manufacturer Part#:

TISP5080H3BJR

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: SURGE SUPP -65V UNIDIR DO-214AA
More Detail: N/A
DataSheet: TISP5080H3BJR datasheetTISP5080H3BJR Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 150V
Voltage - Off State: 65V
Voltage - On State: 3V
Current - Peak Pulse (8/20µs): 300A
Current - Peak Pulse (10/1000µs): 100A
Current - Hold (Ih): 150mA
Number of Elements: 1
Capacitance: 280pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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Thyristors are a kind of semiconductor devices known as four-layer devices, and are widely used in industrial, commercial, and consumer applications. The TISP5080H3BJR is a four terminal thyristor that is widely used in a variety of applications. This article covers the application field and working principle of the TISP5080H3BJR.

The TISP5080H3BJR, designed specifically for busbar protection, offers unique advantages such as reduced volume and power dissipation, improved reliability, increased energy efficiency, and a wide operating temperature range. It can be used for applications such as overcurrent protection, over and under voltage protection, and impact protection. Additionally, it can be used for a variety of other applications such as delaying current, controlling current, and motor protection.

The TISP5080H3BJR consists of two terminals anode (A) and cathode (K), and two control terminals gate (G) and base (B). All four terminals are necessary for its operation. The Gate and Base terminals are used to control the thyristor, while the Anode and Cathode terminals are used for current conduction. The gate terminal is normally kept at a negative voltage with respect to the base terminal. This voltage difference (Vbr for breakdown voltage) is necessary to trigger the thyristor. When sufficient voltage is applied between the gate and base terminals, the thyristor enters its conduction state, allowing current to flow between the anode and cathode terminals. When the gate voltage drops below the base voltage, the thyristor switches off, cutting off the current.

The TISP5080H3BJR is able to handle currents from 8 A to 20 A in a range of temperatures from -40℃ to +125℃. This allows for a wide range of applications such as busbar protection, circuit protection, and motor protection. Additionally, the TISP5080H3BJR features a reverse blocking capability, wherein the thyristor will remain off even when the anode and cathode are reverse biased. This ensures that the thyristor does not get damaged in the event of a reverse voltage spike.

The TISP5080H3BJR is a four-terminal, bidirectional thyristor, and is ideal for applications requiring current control. The wide range of applications, combined with its reverse connecting capability, make it the perfect choice for voltage and current protection of not only motors, but also AC and DC circuits. The device also has a wide temperature range and is able to handle a large current capacity, making it suitable for a variety of industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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