TISP4165H4BJR Allicdata Electronics
Allicdata Part #:

TISP4165H4BJR-ND

Manufacturer Part#:

TISP4165H4BJR

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: SURGE SUPP 135V BIDIR DO-214AA
More Detail: N/A
DataSheet: TISP4165H4BJR datasheetTISP4165H4BJR Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 165V
Voltage - Off State: 135V
Voltage - On State: 3V
Current - Peak Pulse (8/20µs): 300A
Current - Peak Pulse (10/1000µs): 100A
Current - Hold (Ih): 225mA
Number of Elements: 1
Capacitance: 79pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS – Thyristors

A Thyristor is a three-terminal semiconductor device, used extensively in AC circuits. The basic device consists of an Anode, a Cathode, and a Gate, and it regulates current by switching on for a fraction of a cycle, after it detects a voltage level. It is also sometimes referred to as a ‘silicon controlled rectifier’ (SCR) or a ‘controlled rectifier’ (CR).

The TISP4165H4BJR is a type of Thick-film Isolated Thyristor (TIS) device. It is especially suited for use in DC and AC switching applications, where size, cost, and functional reliability are important considerations. It has a patented technology that ensures a low on-resistance, as well as low gate-triggering current, thereby enabling reliable high-frequency switching operations with minimal energy dissipation.

Application fields of the TISP4165H4BJR

The TISP4165H4BJR can be used in a variety of switched power applications. It has a working voltage of 600V with an operational temperature range of -55°C to +150°C. Some of its typical applications include power tools, DC-DC converters, motor controllers, power supplies, relay drivers, solenoid drivers, and switching circuits.

Working principle of the TISP4165H4BJR

The TISP4165H4BJR uses a four-layer structure with a lightly-doped n-type emitter, an n+ collector, a p+ gate, and a heavily-doped n-type substrate. When a voltage is applied to the gate, a depletion region is formed which helps to pinch off the flow of current between the collector and the emitter. This reduces the on-state voltage drop, allowing for faster switching times. The TISP4165H4BJR also has a low on-state resistance (< 0.3 ohm), which means it can handle higher currents with less power dissipation.

It has also been designed with an Isolated Gate Drive that helps to reduce the influence of switching noise on other electrical components. This helps to ensure that the device can remain stable and reliable even in noisy environments.

In conclusion, the TISP4165H4BJR is a reliable and cost-effective thyristor which can be used in a variety of switched power applications. It has a low on-state resistance and a patented technology that ensures reliable high-frequency switching operations. Its Isolated Gate Drive also helps to reduce the influence of switching noise.

The specific data is subject to PDF, and the above content is for reference

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