TISP4250J1BJR-S Allicdata Electronics
Allicdata Part #:

TISP4250J1BJR-S-ND

Manufacturer Part#:

TISP4250J1BJR-S

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: PROTECTOR SINGLE BIDIRECTIONAL
More Detail: N/A
DataSheet: TISP4250J1BJR-S datasheetTISP4250J1BJR-S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 250V
Voltage - Off State: 190V
Current - Peak Pulse (8/20µs): 800A
Current - Peak Pulse (10/1000µs): 200A
Current - Hold (Ih): 20mA
Number of Elements: 1
Capacitance: 105pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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Thyristors, also known as silicon controlled rectifiers (SCRs), are widely used as controllers for AC and DC circuits, and are ideal for providing the power for all types of applications ranging from home appliances to industrial machines. The TISP4250J1BJR-S thyristors are the perfect example of a reliable and efficient thyristor.This paper will discuss the application field and working principle of the TISP4250J1BJR-S thyristor.

The TISP4250J1BJR-S is a great choice for applications that require a high degree of reliability and low power dissipation. This thyristor is ideal for applications such as motor control, overload protection, and line arc protection. It is also suitable for uninterruptible power supplies (UPSs) and energy storage systems. The TISP4250J1BJR-S offers up to 20A of continuous current and up to 250V of blocking voltage, making it suitable for use in a wide range of applications. In addition, this thyristor features a low trigger voltage drop of 3V and a fast turn-off time of 0.8 μs.

The TISP4250J1BJR-S is a four-layer thyristor constructed from a doped resistive substrate surrounded by a field plate. The substrate is an extruded semiconductor material made up of multiple layers of polysilicon. The field plate consists of three layers of metal, which are stacked on top of the substrate in order to provide a low-resistance path for the current to flow. The four layers of the thyristor are the anode, cathode, gate, and emitter layers.

The TISP4250J1BJR-S has an electronic working principle. In this type of thyristor, when voltage is applied to the anode layer, current travels through the P-doped layer to the N-doped layer. This creates a majority carrier, which then travels toward the emitter. If the gate voltage is increased beyond the threshold voltage of the thyristor, the majority carriers activate the device. When the gate voltage reaches a certain value, the thyristor will switch on and current will flow from the anode to the cathode by way of the majority carriers. When the gate voltage is reduced, the thyristor will turn off and no current will flow.

The TISP4250J1BJR-S is a great choice for a variety of AC and DC circuits. This thyristor is ideal for applications such as motor control, overload protection, and line arc protection. It is also suitable for uninterruptible power supplies (UPSs) and energy storage systems. With its high blocking voltage, low turn-on time, and low trigger voltage drop, the TISP4250J1BJR-S offers maximum reliability and efficient power-management.

The specific data is subject to PDF, and the above content is for reference

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