TISP4C115H3BJR-S Allicdata Electronics
Allicdata Part #:

TISP4C115H3BJR-STR-ND

Manufacturer Part#:

TISP4C115H3BJR-S

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: SURGE PROT THYRIST 115V TELECOM
More Detail: N/A
DataSheet: TISP4C115H3BJR-S datasheetTISP4C115H3BJR-S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 115V
Voltage - Off State: 90V
Voltage - On State: 3V
Current - Peak Pulse (10/1000µs): 100A
Current - Hold (Ih): 150mA
Number of Elements: 1
Capacitance: 50pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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TVS - Thyristors: TISP4C115H3BJR-S application field and working principle

A thyristor is a semiconductor device which act as a bistable switch that is, it can remain in either an ON or OFF state, depending on the current applied through it. These devices are also referred to as Silicon Controlled Rectifiers (SCR\'s), Triacs, or Semiconductor Controlled Switches (SCS). A thyristor consists of 4 or 5 layers of semiconductor material, namely two P-type semiconductor layers, sandwiched between two or three N-type layers. TISP4C115H3BJR-S is a thyristor typically used for AC power applications. It is an ultra-sensitive, fast-switching, thyristor device with a wide range of applications, from low-frequency inverter circuits to high-frequency switching circuits.

Application

The TISP4C115H3BJR-S thyristor is typically used in AC power applications such as:

  • AC motor control circuits
  • Inverter circuits
  • AC voltage regulators
  • variable speed drives

Working Principle

The thyristor TISP4C115H3BJR-S is a four-layer device, which consists of two P-type semiconductor layers, sandwiched between two N-type semiconductor layers. In an Off-state,aka the cut-off state, each anode and cathode is isolated from the other, inhibiting any current from flowing between them. On the other hand, when the anode voltage gets sufficiently higher than the cathode voltage, the Gate voltage is also applied, thus forming a three junction network. This causes a large number of electrons to move from the N-type layer to the P-type layer majority carriers, and accelerates current through the thyristor.

When current passes through the thyristor, it is in the On-state, or the forward-biased state. This state is maintained even after the gate voltage is removed, causing the thyristor to remain stuck in the On-state, until the current flowing through it drops below the required level. This phenomenon is known as the “latching” of the thyristor.

The specific data is subject to PDF, and the above content is for reference

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