TISP5080H3BJR-S Allicdata Electronics
Allicdata Part #:

TISP5080H3BJR-STR-ND

Manufacturer Part#:

TISP5080H3BJR-S

Price: $ 0.20
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: PROTECTOR SINGLE UNIDIRECT 80V
More Detail: N/A
DataSheet: TISP5080H3BJR-S datasheetTISP5080H3BJR-S Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
12000 +: $ 0.17690
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 80V
Voltage - Off State: 65V
Voltage - On State: 3V
Current - Peak Pulse (8/20µs): 300A
Current - Peak Pulse (10/1000µs): 100A
Current - Hold (Ih): 150mA
Number of Elements: 1
Capacitance: 345pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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TVS, or Thyristors, are solid state devices that are used to protect circuits from overvoltage conditions. The TISP5080H3BJR-S is a particularly useful TVS for use in low-voltage applications. This article will provide an overview of the application field and working principle of the TISP5080H3BJR-S.

The TISP5080H3BJR-S is designed to protect low-voltage applications, specifically those between 12V and 24V. This device is suited for use in automotive, industrial, railroad and consumer applications, including inverters, motor controllers, and power supplies. It can provide protection from common-mode and differential-mode ESD, EFT, and surge events.

The TISP5080H3BJR-S consists of a four terminal, STMicroelectronics manufactured, monolithic thyristor circuit encapsulated in a surface mount package. The device provides unidirectional protection from surge events up to 8000W peak power dissipations. Its small size (5mm X 6mm) and low profile (1.2mm max) makes it ideal for use in space-limited applications.

The TISP5080H3BJR-S works by providing a low-impedance path for current during an overvoltage or transient event. The device is equipped with two high-speed, bidirectional thyristors connected in series with a common anode. When an overvoltage or transient event occurs, the thyristors become forward-biased which causes them to conduct current. This allows the device to shunt current away from the protected circuit, thus protecting it from damage.

In addition to providing protection from overvoltage and transients, the TISP5080H3BJR-S also provides excellent overvoltage protection and transient suppression performance. It is capable of absorbing up to 255V of differential overvoltage without any damage or other effects on its performance. It also provides up to 400W of mean power dissipation, allowing it to withstand multiple transient events without failure.

The TISP5080H3BJR-S is an ideal device for use in low-voltage applications. Its small size, low profile, and excellent performance make it well-suited for use in a wide range of applications. It is capable of providing protection from ESD, EFT, and surge events, and its high power dissipaton allows it to withstand multiple transient events without failure. In summary, the TISP5080H3BJR-S is an excellent choice for use in any low-voltage application.

The specific data is subject to PDF, and the above content is for reference

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