| Allicdata Part #: | TISP5115H3BJR-STR-ND |
| Manufacturer Part#: |
TISP5115H3BJR-S |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Bourns Inc. |
| Short Description: | PROTECTOR SINGLE UNIDIRECT 115V |
| More Detail: | N/A |
| DataSheet: | TISP5115H3BJR-S Datasheet/PDF |
| Quantity: | 6000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| Voltage - Breakover: | 115V |
| Voltage - Off State: | 90V |
| Voltage - On State: | 3V |
| Current - Peak Pulse (8/20µs): | 300A |
| Current - Peak Pulse (10/1000µs): | 100A |
| Current - Hold (Ih): | 150mA |
| Number of Elements: | 1 |
| Capacitance: | 250pF |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
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The TISP5115H3BJR-S belongs to a family of thyristors, which are solid state semiconductor devices used for power switching and motor control applications. The TISP5115H3BJR-S has a voltage rating of 5V, a holding current rating of 800mA, and a peak reverse voltage of 1500V. The thyristors have an instantaneous turn-on response time of 15ns, and can handle up to 2000Amps of peak forward current.
The thyristor device consists of four layers of semiconductor material. The top two layers, commonly referred to as the anode and cathode, are connected to the supply voltage. The two lower layers, referred to as the gate and emitter, form a junction that is capable of conducting current between the gate and emitter. When the voltage between the anode and cathode is higher than the breakdown voltage of the thyristor, the gate will begin to conduct current, allowing the current to flow in the direction of the emitter.
The working principle of TISP5115H3BJR-S thyristors is based on the principle of avalanche breakdown voltage. When the thyristor is in the open state, there is no current flow. When the voltage between the anode and cathode exceeds the breakdown voltage of the thyristor, the injected minority carriers in the P-N junction generate a avalanche breakdown, which makes the junction conductive and allows current to flow in the direction of the emitter.
TISP5115H3BJR-S thyristors are suitable for high current switching and motor control applications that require a fast turn-on response. They are typically used in DC motor control circuits to control the speed and torque of the motor. They are also used in high power switching applications, such as rectifiers, inverters, and converters. In addition, they are used in high voltage surge protectors, as they are able to handle higher surge currents.
In summary, the TISP5115H3BJR-S is a thyristor device, designed for high current switching and motor control applications. It has a voltage rating of 5V, a holding current rating of 800mA, and a peak reverse voltage of 1500V. With an instantaneous turn-on response time of 15ns, and a peak forward current rating of 2000Amps, it is one of the fastest and most powerful thyristors available.
The specific data is subject to PDF, and the above content is for reference
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TISP5115H3BJR-S Datasheet/PDF