TPD4E1B06DCKR

Capacitance @ Frequency:	--
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6
Base Part Number:	TPD4E1B06
Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Type:	Steering (Rail to Rail)
Unidirectional Channels:	4
Voltage - Reverse Standoff (Typ):	5.5V (Max)
Voltage - Breakdown (Min):	7V
Voltage - Clamping (Max) @ Ipp:	14.5V (Typ)
Current - Peak Pulse (10/1000µs):	3A (8/20µs)
Power - Peak Pulse:	45W
Power Line Protection:	No
Applications:	General Purpose

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TVS - Diodes: TPD4E1B06DCKR Application Field and Working Principle

TVS-Diodes are special devices consisting of a reverse-biased zener and an avalanche diode that are integrated together in one compact package. They are widely used in various applications, such as automotive, consumer electronics, and industrial control systems. In this article, we will discuss the application field and working principle of one specific type of TVS-Diodes, namely the TPD4E1B06DCKR.The TPD4E1B06DCKR is a type of bidirectional transient voltage suppressor (TVS), which provides protection for sensitive components and systems from high-energy transients, such as induced voltage and lightning strikes. It provides high-frequency protection with 1000W peak pulse power with 10/1000μs waveform and a low 6V reverse-breakdown voltage at an operating temperature of -55°C to +125°C. The device also features low clamping voltage and fast reaction times.The TPD4E1B06DCKR is usually used in applications where reverse voltage protection is necessary, such as in automotive power module systems, communication systems, industrial automation equipment, and consumer electronics. It is also suitable for protection of data and signal lines found in high-speed digital applications.The mechanism of operation of the TPD4E1B06DCKR is based on the combined effect of a zener diode and avalanche breakdown mechanism. The zener diode part of the device ensures that the voltage across the diode does not exceed the zener breakdown voltage, which is the reverse-breakdown voltage of the device. This effectively acts as a voltage limiter, protecting the component from transients with a higher voltage. The avalanche breakdown occurs when the voltage across the device exceeds the breakdown voltage, due to this, a large current is allowed to pass through the device, thus providing additional protection.The essential characteristics that make the TPD4E1B06DCKR an ideal protection device are its low clamping voltage and fast response time. The low clamping voltage of the device is achieved by its optimized design, which also helps to suppress the EMI generated from high-speed electronics. Additionally, due to its low reverse breakdown voltage, the device is less likely to become damaged during normal operating conditions, ensuring a long life and reliable protection. Furthermore, the device’s fast response time ensures that it will react quickly to transients.In conclusion, the TPD4E1B06DCKR is an ideal protection device for sensitive electronic components and systems providing reliable reverse voltage protection and clamping protection against high-energy transients. The device is well-suited for a wide range of applications, such as automotive, consumer electronics, and industrial control systems as it features low clamping voltage, fast response times, and a low reverse-breakdown voltage.

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