
Allicdata Part #: | TPS2812DG4-ND |
Manufacturer Part#: |
TPS2812DG4 |
Price: | $ 1.03 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC DUAL HS MOSFET DRVR 8-SOIC |
More Detail: | Low-Side Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | ![]() |
Quantity: | 1000 |
375 +: | $ 0.93114 |
Logic Voltage - VIL, VIH: | 1V, 4V |
Base Part Number: | TPS2812 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TA) |
Rise / Fall Time (Typ): | 14ns, 15ns |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 2A, 2A |
Series: | -- |
Voltage - Supply: | 4 V ~ 14 V |
Gate Type: | N-Channel, P-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Low-Side |
Part Status: | Active |
Packaging: | Tube |
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The TPS2812DG4 is a high-performance gate driver designed to provide precision, logic-level control of high-side and low-side MOSFETs and protection circuits. The TPS2812DG4 gate driver includes an array of innovative features that enable it to meet the highest standards of reliability, performance, and energy efficiency in modern power management applications.
The TPS2812DG4 is a high-voltage, high-side, single-channel MOSFET driver with an independent low-side switch. It is specifically designed for automotive-grade applications, where operating temperature ranges from –40°C to +125°C. It includes a -40V under-voltage lockout (UVLO) and a ground-referenced disable input, which eliminates the need for floating inputs. The controlled discharge circuitry provides enhanced turn-off protection.
The TPS2812DG4 operates in two different modes: lockup and shutdown. In lockup mode, the gate turns on the MOSFETs and the low-side switch is enabled to control the current flow. When the input is switched off, the MOSFET is shut off and the low-side switch is disabled. The TPS2812DG4 can operate in a full-wave, half-wave, or dual output configuration, allowing for flexibility when configuring the drive circuitry.
The TPS2812DG4 also includes provide enhanced protection features. The hysteretic over-current protection (OCP) allows for accurate protection against overload conditions. Thermal shutdown provides protection against thermal runaway due to overheating of the signal driver circuitry. Short-circuit protection (SCP) is also included to protect the gate drive from a sustained high-current condition.
The TPS2812DG4 is a highly versatile device, suitable for a variety of gate-drive applications. Its wide input voltage range, high-temperature operation, and comprehensive fault protection make it particularly well-suited for automotive and portable power applications. The device can be used to drive high-side and low-side MOSFETs, as well as IGBTs, JFETs, gate-turn-off thyristors (GTOs), and TRIACs. It can also be used in power factor correction (PFC) and buck/boost converters.
In addition to its flexibility and robust protection features, the TPS2812DG4 is designed to provide high performance. Its ultra-low propagation delay of 175ns enables fast switching of the gate drive. The TPS2812DG4 also features a low quiescent current of 8.2mA and an enable/disable pin leakage current of -30μA. This reduces power consumption and improves efficiency in power management applications.
The TPS2812DG4 is a high-performance gate driver designed to meet the highest standards of reliability, performance, and energy efficiency. It can be used to drive a variety of power semiconductors, including MOSFETs, IGBTs, JFETs, GTOs, and TRIACs. It includes advanced protection features such as hysteretic OCP, thermal shutdown, and SCP. Its low propagation delay and low quiescent current enable high-performance switching with high efficiency. The TPS2812DG4 is ideal for automotive and portable power management applications, where prolonged battery life and reliability are crucial.
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