TPS28225DRBT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TPS28225DRBT from TI is a dual channel high-speed power MOSFET driver with adjustable current limit used in a range of application fields for gate drives.

It features two independent, high speed power MOSFET drivers designed to minimize the on-resistance of the power MOSFET and reduce the overall losses in power systems. The power MOSFET drivers are short-circuit protected with over-current limit protection, minimized external components, and lowered switching losses.

The TPS38225DRBT is designed to support two high-speed power MOSFETs and provides up to 20 V peak gate drive, which is ideal for driving low on resistance power MOSFETs at high switching speeds with minimal switching losses. It can also drive power MOSFETs with a typical gate capacitance of up to 1000 pF and is able to support up to 2.5 A of peak gate current.

The TPS38225DRBT is ideal for use in a range of applications such as switched mode power supplies, LED lighting, and industrial motor drives, due to its high switching frequency, efficiency, and reliability.

The TPS38225DRBT is able to provide a high switching frequency up to 500 kHz, so is well suited for applications in which high frequency switching is required, such as switched mode power supplies, LED lighting, and industrial motor drives. As a high-speed driver, it also offers efficiency gains over lower speed drivers, due to Power MOSFETs switching faster and with lower losses.

The TPS38225DRBT also offers high reliability, due to its adaptive current limit protection, which reduces the risk of over-current events occurring. This also significantly reduces the need for external protection circuitry, as the TPS38225DRBT is able to conform to the over-current limit of the power MOSFET being driven, ensuring a safe and reliable design.

In terms of design and operation, the TPS38225DRBT is capable of being operated in the half-bridge voltage mode, which allows it to drive an N-channel power MOSFET and a P-channel power MOSFET in a half-bridge configuration.

The TPS38225DRBT also features two independent, external current-sense amplifiers and two independent power MOSFET driver current limit and short-circuit protection with adjustable current limits. The current limit of both the power MOSFET drivers can be adjusted using an external resistor, allowing the designer to optimize the current limit for their specific application.

Overall, the TPS38225DRBT is an ideal dual-channel power MOSFET driver for applications requiring high-speed gate drives. It is capable of taking the on-resistance of the power MOSFET to a minimum, whilst still providing additional protection and reliability. Its current limit is adjustable and its high switching frequency is well suited for a range of applications where high-speed switching is required.

The specific data is subject to PDF, and the above content is for reference