
Allicdata Part #: | 296-22853-2-ND |
Manufacturer Part#: |
TPS28226DR |
Price: | $ 0.48 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC SINK SYNC MOSFET DVR 4A 8SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.44141 |
5000 +: | $ 0.42506 |
12500 +: | $ 0.40871 |
Current - Peak Output (Source, Sink): | -- |
Base Part Number: | TPS28226 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 10ns, 10ns |
High Side Voltage - Max (Bootstrap): | 33V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | -- |
Voltage - Supply: | 6.8 V ~ 8.8 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers
A typical application field of PMIC gate drivers is to drive and control power transistors in switching power converters. The TPS28226DR is a dual totem pole driver integrated circuit that can drive low voltage and low current levels of a level shift/inversion from a regular logic input as high as 5.5V. This device utilizes a high frequency, high rising current switching pulse that is created by an on-chip oscillator.
Working Principle
The TPS28226DR integrates a dual totem pole output driver which is able to drive a load up to 4A. This device uses two N-Channel MOSFETs, one is for low side switching, and the other for high side switching. The LM2678DR has the ability to switch from low side to high side with a proper logic signal. The integrated circuits are designed to minimize power dissipation by reducing switching losses, and featuring low levels of output current. In addition, the TPS28226DR provides protection from device damage by using thermal protection, and other protective measures.
The TPS28226DR is designed for direct connection with low voltage and low current devices. The gate driving capability of the dual totem pole allows for higher current drive capability with minimal power dissipation. The device is suitable for use in various power management circuits, such as switching regulators, motor drives, and power amplifiers.
The TPS28226DR includes a dual, high-frequency drive system with dynamic current limiting. This allows the device to withstand current spikes up to twice its rated DC output current. The integrated protection features include over-current, overtemperature, and short-circuit protection, lending good reliability.
To ensure proper operation in a noisy environment, the device can be configured for cross regulation, and dynamic common-mode control. The dynamic control feature compensates for the effect of noise on the switched devices, allowing for better switching accuracy. The output setting allows for adjustment up to 10A for both the high and low sides.
Key Features and Benefits
The TPS28226DR integrates a dual totem pole output driver which is able to drive a load up to 4A. This device uses two N-Channel MOSFETs, one is for low side switching, and the other for high side switching. The device is suitable for use in various power management circuits, such as switching regulators, motor drives, and power amplifiers. The integrated protection features include over-current, overtemperature, and short-circuit protection, lending good reliability.
The key features and benefits of the TPS28226DR integrated circuit include:
- Integration of two totem poles for low side and high side drive capability
- Dual, high frequency drive system with dynamic current limiting
- Integrated protection features including over-current, over-temperature, and short-circuit protection
- Configurable for cross regulation, and dynamic common-mode control
- Output setting adjustable up to 10A for both high and low sides
The TPS28226DR integrated circuit is a high efficiency device which provides excellent power management performance. It is suitable for use in low voltage, low current applications, and is capable of supplying high gate driving capability with minimal power dissipation.
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