TPS51601ADRBT

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TPS51601ADRBT Application Field and Working Principle Overview

The TPS51601ADRBT is an integrated gate driver for power management integrated circuits (PMICs). It is particularly well suited for driving N-channel MOSFETs and Schottky diodes in DC-DC power supply designs for mobile devices, TVs and other high-efficiency applications. This integrated gate driver is capable of providing high current gate drive, 15V maximum voltage, very low impedance, and fast switching with a minimum footprint.

Features of TPS51601ADRBT

The TPS51601ADRBT is designed with a number of features, including:

• High current gate drive - Provides up to 14A adjustability (up to 30A peak) for driving up to 30V MOSFETs and Schottky diodes.
• Wide supply voltage range - The gate driving voltage can be adjusted from 3.0V to 15V, suitable for DC-DC conversion.
• Ultra low RDSon - With an RDSon of 0.06Ω (max) for N-channel MOSFETs, this ensures minimal power dissipation.
• Fast switching speed - Provides optimal performance with fast switching speeds from 0.9nS rise/fall time.
• Low power dissipation - With low quiescent current of 5µA at 3.3V, and operational frequency up to 1MHz.
• Small package footprint - It comes in a small, 0.4mm pitch, VQFN28 package, which enables optimized PCB design.

Applications of TPS51601ADRBT

With its advanced features, the TPS51601ADRBT is well suited for a variety of DC-DC power supply applications including:

• Mobile solutions such as phones, tablets and laptops, as well as other DC-DC solutions requiring high performance, low RDSon and ultra-low noise.
• Replacing discrete gate drivers in UPS, server, notebook and desktop PCB designs, providing improved efficiency and smaller footprint.
• TVs, digital and analog display, microprocessors and controllers, FPGAs, other processor or ICs requiring up to 15V operating voltage.

Operating Principles of TPS51601ADRBT

The TPS51601ADRBT integrated gate driver is based on a two-stage architecture. The first stage of the circuit consists of a high-gain operational amplifier, which acts as the converter from the input voltage to the required output voltage. The second stage consists of an active driving current, which is generated from the output voltage and is used to drive the MOSFET or diode.

The TPS51601ADRBT also incorporates a wide range of integrated protection circuitry and fault checking functions, including undervoltage lockout, overvoltage protection, and short-circuit protection. Additionally, it crashes the gate drive to ground in case of a device overdrive condition, ensuring reliable operation.

Conclusion

The TPS51601ADRBT is a highly integrated gate driver for PMICs, providing high current gate drive, 15V maximum voltage, very low impedance and fast switching performance. With its wide supply voltage range and low power dissipation, it is well suited for DC-DC power conversions in mobile, server and other applications. Additionally, it features a number of integrated protection features to ensure reliable operation in any design.

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