
Allicdata Part #: | TSC5304EDCHC5G-ND |
Manufacturer Part#: |
TSC5304EDCHC5G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TRANSISTOR, NPN, 400V, 4A, 8A/A |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 35W Through ... |
DataSheet: | ![]() |
Quantity: | 1000 |
5625 +: | $ 0.16075 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 2.5A |
Current - Collector Cutoff (Max): | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 17 @ 1A, 5V |
Power - Max: | 35W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 (IPAK) |
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A transistor is a component used in electronic circuits to control the current or voltage between two points, in which one input controls the other one. It can also be used to amplify an electrical signal, make logic operations, or switch signals. The model TSC5304EDCHC5G is a single bipolar junction transistor (BJT). This type of component is made up of three layers of semiconductor material, usually silicon. In BJTs, majority carriers, usually electrons or holes, can pass through the layers, creating a layer of positive charge on one side and negative charge on the other side. By forming connections across the junction between the two layers, the output current or voltage is controlled by the amount of current applied at the input.
The TSC5304EDCHC5G transistor is a positive road chip. It is composed of an NPN-type transistor transistor and an integrated resistor, both of which are enclosed in an 8-pin DIP solid plastic package. It is commonly used for applications such as inverting and non-inverting amplifier circuits, switching circuits, and motor control circuits. It has a maximum power rating of up to 250 watts and a maximum voltage rating of 15 volts. It has a collector-emitter breakdown voltage of 30 volts and a collector-base breakdown voltage of 200 volts. It has a low on-state collector-emitter saturation voltage of 0.45 volts and a fast recovery time of 6 nanoseconds. It also has a high-speed switching capability, with a rise/fall time of 1 microsecond.
The working principle of the transistor is based on electron flow, in which electric current can be controlled by changing the electric field applied to the transistor. When a voltage is applied to the base of an NPN transistor, electrons will travel to the collector, creating a current. This current is proportional to the voltage applied to the base and can be amplified to create higher voltages or higher currents. When the current is cut off from the base, the electrons flow back to the base, and the current is cut off. With this method, the current or voltage between two points can be precisely controlled by applying a current or voltage to the base.
The TSC5304EDCHC5G transistor can be used for a variety of applications. It is commonly used in switching and amplifier circuits, as well as motor control circuits. It can be used to control the speed of motors, as well as to control the voltage delivery to circuits. It is also used in low-noise amplifier circuits and communications circuits, such as radio receivers and transmitters. It can also be used to create timing circuits and temperature monitoring circuits.
In conclusion, the TSC5304EDCHC5G is a single bipolar junction transistor (BJT). It is commonly used for applications such as inverting and non-inverting amplifier circuits, switching circuits, and motor control circuits. It works by applying a current or voltage to the base, which determines the current or voltage between two points. It has a number of applications, such as amplifier circuits, motor control and temperature sensing.
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