Allicdata Part #: | TSC5802DCHC5G-ND |
Manufacturer Part#: |
TSC5802DCHC5G |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TRANSISTOR, NPN, 450V, 2.5A, 18A |
More Detail: | Bipolar (BJT) Transistor NPN 450V 2.5A 30W Throug... |
DataSheet: | TSC5802DCHC5G Datasheet/PDF |
Quantity: | 1000 |
5625 +: | $ 0.14288 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2.5A |
Voltage - Collector Emitter Breakdown (Max): | 450V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 600mA, 2A |
Current - Collector Cutoff (Max): | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 5V |
Power - Max: | 30W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 (IPAK) |
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The TSC5802DCHC5G is a single bipolar junction transistor (BJT) designed for specific applications in the industrial and automotive fields. Its high switching frequency, low power consumption, and low collector-emitter saturation voltage make it ideal for connection with low-noise and high-efficiency circuits. The device is also rated for operation over a wide range of voltage and temperature. Its efficient design makes it an excellent choice for a variety of applications.
The TSC5802DCHC5G is a medium-scale integrated device in a very small footprint. It is capable of switching gate currents from 10A to 60A. It has a maximum on-state current of 5A and an on-state drop of 0.3V. It is optimized for high-efficiency operation and robust behaviour in the presence of transient external noise. It can withstand a 6A peak-current drive, making it suitable for power MOSFET and IGBT switching.
The TSC5802DCHC5G is based on the emitter-collector diode structure as opposed to a traditional BJT structure. This enables it to switch faster and more efficiently than a traditional BJT. The device is designed primarily to operate in the “on” state, maintaining the collector voltage at a steady state, while the gate voltage is the main controlling factor. The device operates on the concept of spreading gate current over a larger area, allowing a higher current to be driven than with a single BJT.
STD5802DCHC5G has a number of built-in protective features to prevent damage from electrostatic discharge, thermal breakdown, and power supply overvoltage or under-voltage conditions. An internal dV/dt clamp circuit is provided to protect the device from high frequency dV/dt transients. The device also has an under-voltage lockout (UVLO) feature that activates when the supply voltage drops below a certain threshold. This prevents current from flowing when the device is not in use.
The primary application for the TSC5802DCHC5G is for high-performance power and control circuits. It is also suitable for switching high-current loads in automotive, industrial, and telecom/consumer equipment applications. Since the device is designed with both a low saturation voltage and good thermal stability, it can also be used in applications where high-frequency switching is a requirement, such as motor control, solenoids and relays.
In summary, the TSC5802DCHC5G is a single bipolar junction transistor designed primarily for high-performance power and control circuits. It is capable of switching gate currents from 10A to 60A and provides high efficiency and robust behavior in the presence of external noise. It has a number of built-in protective features to prevent damage from electrostatic discharge, thermal breakdown, and power supply overvoltage or under-voltage conditions. It is an excellent choice for a wide range of industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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