TV06B120JB-G Circuit Protection |
|
| Allicdata Part #: | 641-1245-2-ND |
| Manufacturer Part#: |
TV06B120JB-G |
| Price: | $ 0.11 |
| Product Category: | Circuit Protection |
| Manufacturer: | Comchip Technology |
| Short Description: | TVS DIODE 12V 19.9V SMB |
| More Detail: | N/A |
| DataSheet: |  TV06B120JB-G Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 3000 +: | $ 0.09946 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| Type: | Zener |
| Bidirectional Channels: | 1 |
| Voltage - Reverse Standoff (Typ): | 12V |
| Voltage - Breakdown (Min): | 13.3V |
| Voltage - Clamping (Max) @ Ipp: | 19.9V |
| Current - Peak Pulse (10/1000µs): | 30.15A |
| Power - Peak Pulse: | 600W |
| Power Line Protection: | No |
| Applications: | General Purpose |
| Capacitance @ Frequency: | -- |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | SMB (DO-214AA) |
Description
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TV06B120JB-G belongs to the type TVS - Diodes, which have the property of being bidirectional electrostatic discharge protected components. They are capable of diverting a large electric current when the attempt to conduct it in excess of its specified rating.TV06B120JB-G is an ideal application for circuit protection against electrostatic discharge i.e. ESD protection. It is especially suitable for applications where space is a concern. The device consists of a low on-state resistance MOSFET coupled with a dedicated bidirectional Zener diode for electrostatic protection.The working principle of the TV06B120JB-G protects against overvoltage faults that occur during ESD events. When an ESD pulse appears across the device, the MOSFET is opened, and the Zener diode conducts the current to ground. When the current surge is beyond the absolute maximum rating, the on-state resistance of the MOSFET provides protection from overvoltage by slowly limiting the amount of current that can pass through the device. The TV06B120JB-G device is suitable for applications where ESD pulse protection is required in an environment where space is a concern, such as mobile phones, batteries, automotive systems, handheld devices, etc. The greater clamping voltage and peak clamping current ratings make the device an ideal choice for consumer electronics and automobile applications where electrostatic discharge protection is required. It also provides the advantage of improved ESD withstanding strength for the entire system.The TV06B120JB-G is manufactured with a low on-state resistance MOSFET structure, so the device has the advantage of fast response when overvoltage events occur. The Zener diode has a bidirectional ESD protection capability, so the device has better protection capabilities to both the positive and negative polarity, thus providing more reliable and effective ESD protection.In summary, the TV06B120JB-G is the perfect device for applications where ESD protection is required. It provides fast response during overvoltage conditions and improved ESD protection in both directions. It has an improved clamping capability compared to conventional devices and it is especially suited for applications where space is a concern.
The specific data is subject to PDF, and the above content is for reference
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