TV06B5V0JB-G Circuit Protection

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Type:	Zener
Bidirectional Channels:	1
Voltage - Reverse Standoff (Typ):	5V
Voltage - Breakdown (Min):	6.4V
Voltage - Clamping (Max) @ Ipp:	9.2V
Current - Peak Pulse (10/1000µs):	65.22A
Power - Peak Pulse:	600W
Power Line Protection:	No
Applications:	General Purpose
Capacitance @ Frequency:	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	SMB (DO-214AA)

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TVS-Diodes are widely used in the area of protection components. The TV06B5V0JB-G stands as one of the notable devices which are frequently used and provides some adequate protection over a wide area of applications. The outstanding working principles of devices such as the TV06B5V0JB-G is based upon a two terminal voltage protection device, which combines active circuitry as well as semiconductor breakdown properties.The other classical protection components, such as fuses, thyristors, and Crowbar, are getting replaced by these special corresponding diodes. Such diodes are fast in responding during the transient state processing, thus providing an effective protection solution to electrostatic discharge and other unwanted over voltage conditions.The TV06B5V0JB-G are widely available and used in various applications. The device, a 5.7V bidirectional TVS with the peak pulse current limit of 648A, can be effectively utilized for highly repetitive stress and surge applications. It is also a great device to provide a voltage clamping solution to all the electronics that require component level protection. The device has an excellent pulse rate capability, being able to provide protection ratings up to 6kV peak pulse discharge.The working mechanism of the TV06B5V0JB-G diode is based on a three terminal semiconductor device. This diode structure is setup in such a way that it relies on the PN junction breakdown to produce or allow a very efficient reverse current flow. The element which makes it very efficient to dissipate a huge amount of current is the large area of the device, which is quite wide compared to the size of the device itself.The protection mechanism of this diode is based on the PN-junction mechanism. The device helps to suppress all the unwanted noise and transients produced by the electro-magnetic signals. It helps to reduce the noise level during receipt and the transmission of signals, so that the accuracy of the configuration is not compromised.The Zener like functionality of this diode is also a really great feature to protect various electronic components, such as memory modules, from receiving unwanted signals. It can easily handle the overvoltage conditions, and prevent it from propagating, thus managing the ESD situation immediately.In short, the TV06B5V0JB-G is a really great choice of device from the available voltage protection components. It provides the right combination of active circuitry as well as efficient semiconductor breakdown properties, thus providing adequate protection over a wide range of applications. It has an excellent pulse rate capability, and can easily help reduce the noise level during transmission of signals. It can even handle the overvoltage conditions by immediately dissipation of extra current, and there by prevent it from propagating. Thus, in all, TV06B5V0JB-G can prove to be the ideal choice for component level protection solutions.

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