TZM5261C-GS08

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The TZM5261C-GS08 diode is a single Zener diode which is used to regulate the voltage of a circuit. The device is designed with a low-power field effect transistor (FET) to provide the necessary protection and stability. This low-power FET is configured to act as a gate, so that the voltage drop across the diode is controlled. The Zener diode then acts as a voltage reference for the circuit, providing a stable voltage output and keeping it within a certain range. This is important when it comes to circuit stability, allowing accurate and reliable operation.

The TZM5261C-GS08 is a high-speed, low-noise device, making it great for switching applications. It is rated for a maximum power dissipation of 0.3W and a maximum junction temperature of 150°C. Additionally, the diode has extremely low leakage characteristics and can support a high forward voltage. Combined, this makes it ideal for use in a wide range of applications and makes it suitable for a range of power supplies.

The diode also features over-voltage protection, where it will limit the voltage output if it becomes too high. This is designed to protect circuitry from excessive voltages. The device also features thermal shutdown protection which is designed to prevent overloads or shorts that can damage the circuit. The thermal shutdown feature is triggered when the device reaches a certain temperature, preventing further damage and allowing time for the device to cool down.

The TZM5261C-GS08 can be used in a wide range of applications, including switching circuits, regulator circuits, power supplies and consumer electronics. It is also widely used in low-voltage DC (LVDC) and lithium-ion battery charger circuits. The device is also great for automotive applications, as its highly-efficient, low-temperature operation makes it ideal for use in vehicles.

The working principle of the TZM5261C-GS08 is simple. When the device is in a forward biased state, a current of electrons flows from the anode to the cathode of the diode. If the voltage applied to the diode becomes greater than the Zener breakdown voltage, then the reverse current is inhibited and the Zener diode acts as a voltage reference, maintaining a voltage as specified. The FET is capable of controlling the voltage drop across the diode and maintaining the output voltage within a certain range.

In short, the TZM5261C-GS08 is a single Zener diode which is designed to regulate the voltage of a circuit. It features a low-power FET that acts as a gate to control the voltage drop across the diode. The device is suitable for a wide range of applications and is popular for its high-speed and low-noise operation. The working principle of the device is straightforward, as it will limit the voltage output if it exceeds a certain threshold.

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