Allicdata Part #: | TZMC36-GS08GITR-ND |
Manufacturer Part#: |
TZMC36-GS08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 36V 500MW SOD80 |
More Detail: | Zener Diode 36V 500mW ±5% Surface Mount SOD-80 Min... |
DataSheet: | TZMC36-GS08 Datasheet/PDF |
Quantity: | 12500 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 36V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 27V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
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The TZMC36-GS08 is a Single Zener diode, which, just as all Zener diodes, can be used for voltage regulation and voltage reference applications. It can also be used to create low-voltage power supplies for stabilising or ensuring a precise level of power for sensitive components. This device was created for low-cost general-purpose applications, and due to its high-speed capabilities and low capacitance, it can also be used for rolling scans in various low-speed systems.
The TZMC36-GS08 is a single package solution with a single common cathode and a common anode. It is a three-terminal device with a cathode, anode and a reverse-biased gate. The single common cathode is connected to the reverse-biased gate, while the anode and the reverse-biased gate are connected to one another. The zener diode region is between the cathode and the anode. The common anode and the reverse-biased gate form the gate-coupled zener diode region.
The devices are designed to operate in junction rectifier (J-R) application. This devices have a J-R mode breakdown voltage of 36 volts, enabling them to regulate and set voltages accurately when used for voltage regulation or voltage reference applications. These devices also have very low capacitance values, making them ideal for low-frequency applications such as rolling scans.
When the diode is used for voltage regulation or voltage reference applications, the reverse bias gate voltage must be set to the same voltage as the zener diode’s breakdown voltage. This will ensure that the zener diode operates in the forward biased region and provide the desired output voltage. In applications where the output voltage is supposed to remain constant, the gate voltage should remain fixed.
When the device is used for rolling scans, the reverse-biased gate voltage must be varied in order to control the gate voltage. This will enable the device to switch between different gate voltages which in turn changes the output voltage. This will enable the device to accurately scan a range of output voltages.
The TZMC36-GS08 is constructed with a silicon power diode and is encapsulated with a glass-passivated case for added durability and reliability. The device works in junction rectifier mode and can provide a breakdown voltage range of up to 36 volts. It is a low cost general-purpose device with low capacitance values and is ideal for low-frequency applications such as rolling scans. The device is also suitable for voltage regulation and voltage reference applications.
The specific data is subject to PDF, and the above content is for reference
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