TZMC75-GS08 Allicdata Electronics
Allicdata Part #:

TZMC75-GS08GITR-ND

Manufacturer Part#:

TZMC75-GS08

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 75V 500MW SOD80
More Detail: Zener Diode 75V 500mW ±5% Surface Mount SOD-80 Min...
DataSheet: TZMC75-GS08 datasheetTZMC75-GS08 Datasheet/PDF
Quantity: 10000
2500 +: $ 0.02361
5000 +: $ 0.02130
12500 +: $ 0.01852
25000 +: $ 0.01667
62500 +: $ 0.01482
125000 +: $ 0.01235
Stock 10000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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The TZMC75-GS08 is a single Zener diode, and it has many potential applications. It is commonly used in circuit protection and regulation, particularly in high-voltage situations. With its small size, temperature coefficient of reverse leakage current, high peak-inverse working voltage, and low dynamic impedance, it is well suited for many types of electronic applications.

Application Field

The most common application for TZMC75-GS08 is in protector circuits, where the diode regulates the current level rapidly and effectively. The diode can be used in clamping circuits, preventing voltage peaks and arcs. Additionally, it is often used to provide a reinforced ground or power connection in high-voltage applications. It is suitable for use with medical, telecommunication and industrial equipment, as these often experience high electrical interference due to the presence of high-frequency signals.

The TZMC75-GS08 can also be used in a variety of light emitting diode (LED) applications. The diode can provide an accurate and reliable way to regulate the amount of voltage and current flowing through the LED, allowing it to emit a consistent light level. Additionally, the diode can often be used in conjunction with a resistor for the purpose of controlling brightness in an LED display. The diode can also be used in signal-transmitting and switching devices, providing surge protection and reliable signal transmission in the process.

Working Principle

The TZMC75-GS08 works by operating on the principle of the effects of temperature on the semiconducting properties of certain materials. In this case, the material is a “silicon substrate” which is activated by exposure to a certain amount of temperature. Basically, when the diode is exposed to the pre-set temperature, it will exhibit negative resistance, thereby regulating the flow of current and voltage across the diode. This negative resistance is what allows the diode to conduct the current without causing any damage to the components connected to it.

The diode is designed to handle up to a maximum working voltage of 150V, which can be further adjusted using the resistor connected to its cathode. This adjustment allows for the desired level of protection in given applications, keeping power levels safe for the connected components. The diode also offers a high level of reverse voltage protection thanks to the high peak-inverse working voltage.

The TZMC75-GS08 also has a small size which makes it suitable for a variety of applications. In addition, it has a low dynamic impedance, making it an ideal choice for applications that require a rapid response time, such as protector circuits. The temperature coefficient of reverse leakage current ensures a controlled and consistent performance in both high and low temperature situations.

Conclusion

In conclusion, the TZMC75-GS08 is a single Zener diode with many potential applications. It is primarily used in protector circuits, LED applications, and signal-transmitting and switching devices. The diode can operate on the principle of temperature-dependent semiconductor properties, and features a high peak-inverse working voltage and a low dynamic impedance. The high peak-inverse working voltage allows for a high level of reverse voltage protection, while the small size makes it suitable for a wide range of applications. Finally, the low dynamic impedance ensures fast and accurate response times, making it an ideal choice for electronic circuit protection and regulation.

The specific data is subject to PDF, and the above content is for reference

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