TZX20B-TR

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Diodes - Zener - Single

TZX20B-TR is a single zener diode commonly used in RF engineers and applications mainly due to their ability to withstand extreme temperatures, along with other environmental extremes. The device also offers extremely low reverse leakage and low zener voltage range capability.

The TZX20B-TR diode is a single zener diode made from an epitaxial construction. The diode is an isolation diode and its junction is enclosed in the same envelope and consists of the same material. It is encased in a hermetically sealed TO-226AA (SOT-223) package with a gold-plated copper lead frame that offers corrosion resistance, thermal stability and insulation strength. The TZX20B-TR is available in a wide range of zener voltages from 1V to 200V with operating temperature range from -65°C to +125°C.

Application Field

TZX20B-TR is a highly reliable and versatile diode that is suitable for a wide range of electronic applications, such as in automotive, telecommunications, computers, consumer electronics, and test and measurement. Generally, it is used in devices such as voltage regulation, voltage references, voltage protection, and overvoltage protection devices. In addition, they are suitable for use in ESD protective devices, current-limited surge protective circuits, and low-voltage silicon-controlled rectifier crowbar applications.

TZX20B-TR can also be used in analog and digital electronic circuits where it can be used to create static capacitors, and in RF circuits to decrease the permeability of traps, attenuators, and filters. They are also used in power supply and power control circuits, due to their ability to withstand extreme temperatures and environmental conditions.

Working Principle

A zener diode acts just like a PN junction diode in reverse bias, yet their behavior differs significantly from that of a normal diode. Generally, the reverse breakdown voltage is only slightly larger than the forward breakover voltage. In the forward direction, the TZX20B-TR behaves much the same way a normal diode, with the junction behaving like a semiconductor depletion region. In reverse bias, however, the voltage of the junction increases with current until the reverse breakdown voltage is reached. At this point, the diode begins to conduct in the reverse direction, allowing a large amount of current to flow through the diode. This is the working principle behind the TZX20B-TR.

Conclusion

The TZX20B-TR is a single zener diode that offers a wide range of operating temperature and low reverse leakage. It is suitable for a variety of electronic applications and can be used in power supply and power control circuits, due to its ability to withstand extreme temperatures and environmental conditions. The zener diode works by reversing the voltage-current behavior of a normal diode, causing a high current to flow through the diode when the reverse breakdown voltage is reached. This makes the TZX20B-TR a reliable and versatile choice for a wide range of RF engineers and applications.

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