| Allicdata Part #: | TZX4V7A-TR-ND |
| Manufacturer Part#: |
TZX4V7A-TR |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 4.7V 500MW DO35 |
| More Detail: | Zener Diode 4.7V 500mW Through Hole DO-35 |
| DataSheet: | TZX4V7A-TR Datasheet/PDF |
| Quantity: | 1000 |
| 30000 +: | $ 0.01548 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 4.7V |
| Tolerance: | -- |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 100 Ohms |
| Current - Reverse Leakage @ Vr: | 5µA @ 2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | DO-35 |
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Diodes - Zener - Single includes a vast range of components that can be used in different applications. One such component is the TZX4V7A-TR. This component is a very useful in high frequency applications and is typically designed for use as voltage clamping or reverse bias protection.
The TZX4V7A-TR diode is a single Zener diode specially designed for use with high-speed applications. It provides a low noise, low capacitance solution to any application environment requiring a low cost, reliable and low power protection solution.
The working principle of the TZX4V7A-TR diode is based on reverse bias leakage. It uses an avalanche breakdown principle which is an electron migration effect in which when a certain electric field is applied to a solid-state material an electric current begins to flow through the material, causing it to break down. This breakdown current is then used to protect the device from any potential over-voltage by providing a direct clamping action on the voltage present.
The TZX4V7A-TR diode has a wide range of applications where it is used for protection from excessive voltage in power supplies and other similar devices. It can also be used in TTL, ECL, and MIL-STD circuits, as well as in amplifier and high-frequency oscilloscope applications. Besides being used in circuit protection, the TZX4V7A-TR diode can also be used as a voltage clamp in flyback circuits, or used as a ballast resistor in automotive applications.
The TZX4V7A-TR Diode is also capable of protecting against electrostatic discharge (ESD) and radiation. These protective features make it ideal for use in high-speed applications, where precise and reliable protection is essential. In addition, it provides higher reverse voltage ratings than other standard Zener diodes and can operate at higher frequencies due to its higher performance. It can withstand high transient voltages and operate at temperatures up to 150°C.
In conclusion, the TZX4V7A-TR is a single Zener diode designed specifically for use in high-speed applications. It features a reverse bias leakage mechanism, which provides a low power, reliable protection solution in any environment. The TZX4V7A-TR diode also has a wide array of applications, including use as a voltage clamp in flyback circuits, as well as providing protection from electrostatic discharge and radiation for high-speed applications. It is able to operate at temperatures up to 150°C and is capable of providing higher reverse voltage ratings than other standard Zener diodes.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TZX4V7C-TR | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 4.7V 500MW DO... |
| TZX4V3D-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V3C-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V7C-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.7V 500MW DO... |
| TZX4V7B-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.7V 500MW DO... |
| TZX4V7A-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.7V 500MW DO... |
| TZX4V3C-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V3B-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V3D-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V3B-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V7D-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.7V 500MW DO... |
| TZX4V3A-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V7D-TAP | Vishay Semic... | -- | 30000 | DIODE ZENER 4.7V 500MW DO... |
| TZX4V7B-TAP | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 4.7V 500MW DO... |
| TZX4V3A-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.3V 500MW DO... |
| TZX4V7A-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 4.7V 500MW DO... |
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TZX4V7A-TR Datasheet/PDF