TZX4V7B-TR Allicdata Electronics
Allicdata Part #:

TZX4V7B-TR-ND

Manufacturer Part#:

TZX4V7B-TR

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 4.7V 500MW DO35
More Detail: Zener Diode 4.7V 500mW Through Hole DO-35
DataSheet: TZX4V7B-TR datasheetTZX4V7B-TR Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01548
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

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Diodes are a type of semiconductor device that allow current to flow in one direction only. They are used in a variety of applications, from controlling current in consumer electronics to stabilizing voltages in medical equipment. Zener diodes are a special type of diode that are designed to pass current in the opposite direction when a voltages greater than a predetermined level are applied. The Zener diode acts as a voltage regulator, providing a stable voltage output regardless of fluctuations in the input voltage. The TZX4V7B-TR is a single Zener diode with a nominal breakdown voltage of 4.7 volts.

The TZX4V7B-TR is made with a P-N junction in an axial-lead package. It is designed to protect electronic circuit components against voltage spikes, and to provide some voltage regulation in applications where input voltage levels can vary widely. The diode is rated to provide a maximum voltage of 4.7V across its terminals, regardless of the input voltage. The diode is also rated to pass a maximum amount of current, which must not be exceeded or the diode may be damaged.

When the voltage applied to the diode is below the rated 4.7V breakdown voltage, it acts as an open circuit, effectively blocking the current from passing through. However, when the input voltage increases to a level higher than the breakdown voltage, the diode suddenly allows current to flow in the opposite direction, dropping the output voltage to a level at or near the rated 4.7V. This reversal of current is known as the Zener effect, and it is this effect that gives the diode its ability to provide voltage regulation.

The structure of a Zener diode is relatively simple. It consists of two junction layers of semiconductor material inside a metal shell. An applied voltage across the two layers pulls electrons from the more heavily doped N junction layer, creating an "electron depletion layer" between the two doped layers that prevents current from passing. As the applied voltage increases, the depletion layer gets larger, creating a high resistance and blocking current flow. However, at a certain point, the applied voltage is high enough to force electrons across the depletion layer, allowing current to pass in the opposite direction. This sudden inversion of current is the Zener effect.

The TZX4V7B-TR Zener diode is commonly used in applications that require voltage stabilization without the need for a relatively large and expensive voltage regulator component. It is also useful for protecting sensitive electronics from voltage spikes that would otherwise cause damage or failure. The TZX4V7B-TR is designed for applications requiring a 4.7V breakdown voltage, although other versions of the same diode type are available with breakdown voltages of 2.4V, 3V, and 5.1V.

The specific data is subject to PDF, and the above content is for reference

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