TZX4V7B-TAP Discrete Semiconductor Products

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Diodes - Zener - Single

1. TZX4V7B-TAP application field and working principle

   The TZX4V7B-TAP is a type of single diode-zener, which is commonly used in electronic circuits. It is made of a semiconductor substrate with metal contacts on both sides, and each contact is designed to hold a single polarity. The metal contacts of the device are located at the center and mounted in a metal package that is electrically insulated from the substrate. The TZX4V7B-TAP has a breakdown voltage of 4.4 V, a working current of 5 mA, and a power dissipation of 350 mW.

   The diode-zener provides a low- voltage, low- current power supply for the circuit. The working principle of the diode-zener is based on the potential barrier created at the interface between the N-type and P-type layers of the semiconductor material. When a voltage higher than the breakdown voltage is applied to the device, the holes move towards the P-type layer and the electrons move towards the N-type layer. This causes an increase in the doping of the opposite layers and a sharp reduction in the barrier potential, thus providing a low-voltage, low-current power supply to the circuit.

   The TZX4V7B-TAP is used in a variety of applications, including rectification, voltage regulation, and protection circuits. The device can also be used in power supply circuits, where it acts as a voltage regulator. Additionally, the diode-zener can be used in clamping and clipping circuits for adjusting the input and output voltages of the circuit. The device is also employed in sampling and other pulse applications as it offers a fast and low-power response. Furthermore, the device can be used as a switch in circuits requiring compact and low-current switches.

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