UF28100H

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The UF28100H is a high power Field Effect Transistor (FET) specifically designed for use in Radio Frequency (RF) circuits. First released by UF, the UF28100H has become known for its excellent linearity, high ruggedness and low noise figures. The UF28100H is a N-channel enhancement mode FET which translates to an ability to be operated in pure voltage mode instead of current mode; the primary advantage of this being lower power consumption.

The UF28100H has seen application in both high-power RF transmitter and receiver systems, especially cellular base station and Wi-Fi routers. The UF28100H is also used in wireless network communications, as it is capable of providing sensitive control of high power in various applications. Additionally, it is also used in Amplitude Modulation (AM) radio systems for their linearity.

The working principle of the UF28100H is based on the process of "field-effect modulation". In this process, an electric field is created over the FET surface which changes the resistance in the channel. This electric field is the result of a voltage applied to the Gate terminal of the FET. This voltage is then used to modulate the impedance of the FET allowing for a precise control of the electrical current being conducted.

The key features of the UF28100H are summarized as follows. The device can operate at frequencies up to 1.3GHz and offers improved noise figure performance compared to traditional FETs. The UF28100H is capable of biasing at both low and high gate voltages. It has an RF power rating of 50 Watts, an average power gain of 14dB, a drain efficiency of 36-32%, and an input capacitance of 25pF at a supply voltage of 28V.

The UF28100H is optimized for use in a wide range of RF applications, making it a versatile FET solution. Its linearity ensures that it is well-suited for use in advanced RF systems. Additionally, it is engineered to be rugged and offers excellent noise performance, making it a great choice for applications where high-fidelity transmission is critical.

In conclusion, the UF28100H is a robust and high performance FET that can be found in various RF applications. With its exceptional linearity, ruggedness and low noise figures, the UF28100H is a great choice for precision control of high power in various uses. As a result, the device is ideal for use in both high-power RF transmitter and receiver systems, as well as in wireless networks, AM radio, and other RF-based systems.

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