UFS310JE3/TR13 Allicdata Electronics
Allicdata Part #:

UFS310JE3/TR13-ND

Manufacturer Part#:

UFS310JE3/TR13

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 100V 3A DO214AB
More Detail: Diode Standard 100V 3A Surface Mount DO-214AB
DataSheet: UFS310JE3/TR13 datasheetUFS310JE3/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.61619
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: UFS310
Description

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UFS310JE3/TR13 Application Field and Working Principle

UFS310JE3/TR13 is a diode which belongs to the family of rectifiers – single. It is produced by Infineon and is a Schottky Barrier Rectifier, which have the capability of rectifying a wide range of frequencies, both AC and DC.

This diode is usually used in low voltage and high frequency applications, as it has a relatively low forward voltage drop (Vf). It has been specifically designed to handle large current capacities, up to 3 amps. This makes it an ideal choice for applications requiring accurate and precise rectification, such as power supply and switching circuits.

In terms of how the UFS310JE3/TR13 actually works, it relies on a Schottky barrier rectification process which requires essentially no voltage at the PN junction where the diode works. When the diode is forward biased, the electrons are able to cross the Schottky barrier, as the barrier is made up of two different types of metal oxide materials. This is not possible with a standard PN junction, as the PN junction has an energy gap that does not quite match up to the energy required for electrons to make the crossing.

Once the electrons have passed through the barrier and reached the other side, they form a rectified current. The current is reverse biased when the diode is reversed and the positive charge carriers, known as “holes”, are able to pass freely. This process is what enables the diode to act as a one way “valve”, allowing rectified current to flow in one direction while preventing any current from flowing in the opposite direction.

Overall, the UFS310JE3/TR13 is a great choice for applications that require a device which can handle large current capacities, up to 3 amps, and provide accurate and precise rectification. It has a low forward voltage drop, which helps to maximize the efficiency of the rectification process. This diode can be effectively used in power supply and switching circuits, as well as in other low voltage, high frequency microelectronics applications.

The specific data is subject to PDF, and the above content is for reference

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UFS315J/TR13 Microsemi Co... 1.35 $ 1000 DIODE GEN PURP 150V 3A DO...
UFS320J/TR13 Microsemi Co... 1.35 $ 1000 DIODE GEN PURP 200V 3A DO...
UFS330J/TR13 Microsemi Co... 1.35 $ 1000 DIODE GEN PURP 300V 3A DO...
UFS340J/TR13 Microsemi Co... 1.35 $ 1000 DIODE GEN PURP 400V 3A DO...
UFS350J/TR13 Microsemi Co... 1.35 $ 1000 DIODE GEN PURP 500V 3A DO...
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UFS305G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 50V 3A DO2...
UFS310G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 100V 3A DO...
UFS315G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 150V 3A DO...
UFS320G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 200V 3A DO...
UFS330G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 300V 3A DO...
UFS340G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 400V 3A DO...
UFS350G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 500V 3A DO...
UFS360G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 600V 3A DO...
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UFS380G/TR13 Microsemi Co... 1.56 $ 1000 DIODE GEN PURP 800V 3A DO...
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