Allicdata Part #: | UGF2004GHC0G-ND |
Manufacturer Part#: |
UGF2004GHC0G |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ARRAY GP 200V ITO-220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 20... |
DataSheet: | UGF2004GHC0G Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.27287 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Operating Temperature - Junction: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
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The UGF2004GHC0G belongs to the diodes - rectifiers - arrays category. It is a four-terminal device specifically designed for general-purpose high current rectification applications.
The UGF2004GHC0G consists of multiple high-current rectifier components in an array format. It features an array of four (4) rectifiers in a single SMT package with the following features:
- Low VF Characteristic
- High Reown
- Low Reverse Leakage
- High Isolation Voltage Between Stages
- High Thermal Performance
These features combined lead to improved heat dissipation, increased reliability and increased efficiency of rectification. The UGF2004GHC0G can provide high-current, bidirectional rectification when used in the appropriate applications.
The working principle of the UGF2004GHC0G involves the use of two symmetrical rectifiers in series, with the first rectifier being designed to provide higher forward voltage drop (VF) and the other rectifier designed to provide low reverse leakage current (IR). The two rectifiers are connected in series to produce a bidirectional rectification and reduce the total VF.
In these circuits, the forward voltage drop (VF) is proportional to the amount of forward current (IF) and is determined by the size of the rectifier. The smaller the rectifiers, the lower the forward voltage drop; this is because the semiconductor junctions present in the rectifiers have a natural resistance to a forward current. As the forward current increases, this resistance increases, resulting in a higher forward voltage drop. This phenomenon is known as the VF drop equation.
This VF drop equation is important for determining the forward voltage drop at which point the device will be able to absorb the full forward current without failing. As the forward voltage drop increases, the total amount of energy lost due to voltage drops will also increase. Therefore, it is important to ensure that the forward voltage drop of the device is kept low in order to maximize efficiency.
The reverse leakage current (IR) is used to measure the amount of current that flows through the rectifier when it is in the reverse-bias condition. This current is important because it determines how much power is dissipated when the device is in reverse bias. This power is lost due to the higher resistance to the current passing through the rectifier. The larger the reverse leakage current, the higher the amount of power lost. Therefore, the UGF2004GHC0G is designed with a low reverse leakage current (IR).
The UGF2004GHC0G has a wide array of applications including switching power supplies, rectification for low-voltage, high-current applications, rectification for high-voltage, low-current applications, battery-charger applications and many others. Its bidirectional rectification capability makes it suitable for applications that require both DC and AC components.
In summary, the UGF2004GHC0G is a four-terminal device specifically designed for general-purpose high current rectification applications. It adopts a pair of symmetrical rectifiers, which is connected in series to provide bidirectional rectification and reduce the total forward voltage drop. It has an array of features such as low VF characteristic, high Reown, low reverse leakage current and high isolation voltage between stages which ultimately lead to improved heat dissipation, increased reliability and increased efficiency of rectification. The UGF2004GHC0G is suitable for applications such as switching power supplies and battery-charger applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UGF2004G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 200V ITO-2... |
UGF2005G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 300V ITO-2... |
UGF2007G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 500V ITO-2... |
UGF2008G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 600V ITO-2... |
UGF2004GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 200V ITO-2... |
UGF2005GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 300V ITO-2... |
UGF2006GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 400V ITO-2... |
UGF2007GHC0G | Taiwan Semic... | 0.3 $ | 1000 | DIODE ARRAY GP 500V ITO-2... |
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