UGF2008GHC0G Allicdata Electronics
Allicdata Part #:

UGF2008GHC0G-ND

Manufacturer Part#:

UGF2008GHC0G

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ARRAY GP 600V ITO-220AB
More Detail: Diode Array 1 Pair Common Cathode Standard 600V 20...
DataSheet: UGF2008GHC0G datasheetUGF2008GHC0G Datasheet/PDF
Quantity: 1000
1000 +: $ 0.27287
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Description

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A UGF2008GHC0G is an efficient semiconductor device that enables electrical power to be converted from one form to another. It is widely used in applications across many industries, from consumer electronics to industrial power conversion. The UGF2008GHC0G belongs to the category of diodes, rectifiers, and arrays. It is specially designed to provide protection against devices with a high voltage.

Functionality and Use

The main purpose of the UGF2008GHC0G is to convert direct current (DC) to alternating current (AC). It is commonly used in circuits that regulate high-voltage power sources such as those found in heavy industrial equipment. This device is also used to invert or rectify high-current DC signals or generate AC signals from DC signals. As an array, the circuit is designed with multiple devices to increase the speed and efficiency of power conversions.

Design and Working Principle

The UGF2008GHC0G consists of two main components: the upper portion includes a signal transfer circuit comprised of three branches, while the lower portion includes a signal integration circuit comprised of three branches. The signal transfer circuit includes a gate FET, which is responsible for generating the high-frequency signal output. The signal is amplified with a buffer amplifier and then transmitted to the signal integration circuit via the output terminals. This circuit regulates the output signal, correcting the signal\'s phase and amplitude errors and providing a clean, stable signal.The signal is then sent to an input terminal from the output terminal by a transfer switch, and the integrated signal is generated. This integrated signal is then amplified with a power amplifier, and the amplified signal is then fed back to the gate for feedback control.

Performance and Benefits

The UGF2008GHC0G offers several advantages to users. Its low power consumption and high power conversion efficiency make it an ideal choice for applications that require reliable conversion and careful control. Its high voltage breakdown protection also keeps the device safe from power surges. The device\'s narrow switching frequency range and low jitter also make it ideal for applications requiring precise feedback control and low power consumption. Its wide temperature range of operation and robust package also offer excellent performance and reliability.

Conclusion

In summary, the UGF2008GHC0G is a highly efficient and reliable semiconductor device specially designed for the conversion of electrical power. It is part of the category of diodes, rectifiers, and arrays, and it offers a variety of performance benefits, such as low power consumption, high power conversion efficiency, high voltage breakdown protection, and wide temperature range of operation. It also provides users with a narrow switching frequency range, low jitter, and a robust package.

The specific data is subject to PDF, and the above content is for reference

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