UHV1C821MPD1TD

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Aluminum electrolytic capacitors are widely used in a variety of electronic equipment and instruments. The UHV1C821MPD1TD is one of them and is specifically designed for high frequency filtering applications. It features a non-polarized radial leaded molded aluminum casing and has a capacitance range of 2.2-220uF, rated voltage of 6.3V-100V and a leakage current of 1-3uA.

The UHV1C821MPD1TD can be found in a variety of applications, most notably power supplies. The device is able to filter out noise on high frequency circuits and reduce the risk of circuit malfunction due to electromagnetic interference. The capacitor also helps to protect against voltage spikes, ensuring that sensitive components are not damaged. Additionally, the UHV1C821MPD1TD can be used in switching power supplies to allow for manual or automated regulation of the current.

In terms of its working principle, the device is based on the Farad’s Law, which states that the capacitance of a capacitor is equal to the product of the area of the plates and the permittivity of the dielectric material and is inversely proportional to the distance between the plates. In the case of the UHV1C821MPD1TD, a thin foil of aluminum is used as the plates, with an oxide-film dielectric in between.

When voltage is applied, the two electrodes become charged and an electric field is established. This causes the oxide film to expand, providing a low-resistance path for current. As current passes through the device, charge is stored in the device until the voltage is removed. This stored charge forms the basis of the device\'s capacitance and is known as a Faraday cage.

The UHV1C821MPD1TD is a reliable and efficient Aluminum electrolytic capacitor, offering a wealth of advantages for the engineer. Its robust construction and wide capacitance range make it suitable for a variety of applications and its ability to reduce electromagnetic interference ensures robust reliable operation. In terms of its working principle, Farad’s Law is the foundation upon which the device is based, providing a low-resistance path for current and stored charge to be the basis of the device’s capacitance.

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