UM6K31NFHATCN Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	250mA (Ta)
Rds On (Max) @ Id, Vgs:	2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	15pF @ 25V
Power - Max:	150mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	UMT6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The UM6K31NFHATCN is a MOSFET array type of transistor, specifically designed for high-voltage, high-current applications. The array consists of eight MOSFETs arranged in a V-shaped array. This allows it to operate at high peak currents and helps to minimize gate-source and gate-drain parasitic capacitance.

Applications

This transistor can be used in high voltage, high current applications such as:* Motor controllers* Current limiters* Generator drives* Gate drivers * Power amplifiers * Switch-Mode Power Supplies (SMPS)In addition, this transistor can be used in other applications such as solar cell energizers and in high-power AC/DC converters.

Advantages

One of the main advantages of the UM6K31NFHATCN is its ability to handle high voltage and current. The high voltage and current capability allows for higher efficiency as compared to more traditional transistors and helps minimize losses due to thermal runaway.In addition, due to its low conduction and switching losses, this device is suitable for applications which require high power and high speed. This is especially advantageous in applications which require high efficiency and power conversion without excessive power loss.Finally, since it is a MOSFET array type of transistor, this transistor is especially suitable for high power AC/DC converters. This is because it has a low on-state resistance and is capable of handling high input voltages with low switching and conduction losses, thus making it an ideal device for power conversion.

Working Principle

When a voltage is applied to the source of the UM6K31NFHATCN, the gate voltage is increased which allows more electrons to pass from the source to the drain. This results in a larger current from the drain.At the same time, the drain voltage is decreased which causes the internal transistor resistance to be reduced, thus resulting in a greater short circuit current. This allows for high efficiency and power conversion without excessive power loss.The switching speed of the MOSFET array is also very fast, thus making it the ideal device for applications which require high power AC/DC converters.

Conclusion

The UM6K31NFHATCN is a MOSFET array type of transistor which is specifically designed for high voltage, high current applications. The array consists of eight MOSFETs arranged in a V-shaped array, which enables it to operate at high peak currents and helps to minimize gate-source and gate-drain parasitic capacitance.The device is suitable for applications such as motor controllers, current limiters, generator drives, gate drivers and power amplifiers. Due to its low conduction and switching losses, this device is suitable for high power, high speed applications. This, along with the device\'s high voltage and current capability, makes it an ideal device for applications which require high efficiency and power conversion without excessive power loss.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description