UM6K34NTCN Allicdata Electronics

UM6K34NTCN Discrete Semiconductor Products

Allicdata Part #:

UM6K34NTCNTR-ND

Manufacturer Part#:

UM6K34NTCN

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET 2N-CH 50V 0.2A UMT6
More Detail: Mosfet Array 2 N-Channel (Dual) 50V 200mA 120mW Su...
DataSheet: UM6K34NTCN datasheetUM6K34NTCN Datasheet/PDF
Quantity: 6000
3000 +: $ 0.04782
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 0.9V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

UM6K34NTCN is a type of transistors used in field-effect transistor arrays. It is designed to allow a great deal of flexibility in design and in manipulation of signals. The device is also fabricated with a number of on-chip metal-oxide-semiconductor nanocrystal fabrication processes that make it highly reliable, low cost, and of small size.

The unique feature of UM6K34NTCN transistors is the ability to be integrated in an array configuration. This application allows them to be used in many different applications requiring multiple transistors and field-effect transistor (FET) arrays. It also allows designers to customize their circuit\'s architecture to fit the required application.

In their most basic form, FETs are made up of two or more transistors arranged in a row or pattern to form a field-effect transistor array (FET array). Each array component is connected to a source and drained voltage (Vdss) and then a gate voltage for controlling the current through it. The gate voltage can be programmed to different values using resistive elements in order to provide logic-level inputs to the FET array. The FET array can also be used as a kind of logic block, using logic gates to control the logic levels of different inputs.

The UM6K34NTCN array architecture allows for the creation of multiple-input FET arrays. This means that the FET array can be used to create multi-bit data paths, thereby allowing for multiple-bit signals to be manipulated in a single circuit. It also enables the connection of multiple switches and transistors, allowing for a variety of logic functions.

The voltage controlled resistors attached to the UM6K34NTCN array are used to program the gate voltage of the array. These resistors can be programmed to different values, enabling different combinations of gate voltages. This opens up a vast range of possibilities in the design of circuits with multiple logic elements. The resistors can also be programmed to a large degree of accuracy, allowing for precision control of the logic.

The UM6K34NTCN transistor works by using electrons from a voltage source to turn on and off. This can be done by changing the voltage on the gate of the transistor. When the voltage source is off, the gate of the transistor is open, allowing electrons to flow through the transistor and thus turn on the transistor. When the voltage source is on, the gate of the transistor is closed and the electrons are unable to pass, thus turning off the transistor. If the voltage is adjusted and the gate is set to a certain voltage, the current through the transistor can be adjusted.

In addition to controlling the current of the transistor, the UM6K34NTCN transistor can be used as an amplifier. This means that an increase in the gate voltage will increase the current through the transistor, amplifying the signal. This enables the device to perform amplification and equalization of signals, as well as filtering and signal processing. The device can also be used in conjunction with other FET arrays to create logic circuits.

The UM6K34NTCN transistor is used in a wide variety of applications, ranging from industrial and automotive applications to consumer electronics. Its ability to provide high reliability, low cost, and small size makes it an attractive choice for many different applications. It is also being used more and more in applications such as communications, computers, and medical electronics.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "UM6K" Included word is 5
Part Number Manufacturer Price Quantity Description
UM6K33NTN ROHM Semicon... 0.05 $ 1000 MOSFET 2N-CH 50V 0.2A UMT...
UM6K34NTCN ROHM Semicon... 0.06 $ 6000 MOSFET 2N-CH 50V 0.2A UMT...
UM6K31NTN ROHM Semicon... 0.08 $ 45000 MOSFET 2N-CH 60V 0.25A UM...
UM6K1NTN ROHM Semicon... -- 21000 MOSFET 2N-CH 30V .1A SOT-...
UM6K31NFHATCN ROHM Semicon... 0.07 $ 3000 2.5V DRIVE NCH+NCH MOSFET...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics