UMB11NTN

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The UMB11NTN is an advanced pre-biased silicon NPN transistor declared suitable for amplifier and switched applications. UMB11NTN transistors are transistor array devices, with in-built function of two NPN transistors. It is suitable for low power AF amplifier and low frequency oscillation applications. The UMB11NTN transistors offer a high power rating at a low collector-emitter voltage, making this device a great choice for applications that require a slight increase in performance over a standard transistor.

The UMB11NTN consists of two NPN transistors in a single package, with each transistor having a separate collector and emitter. The device is designed for high power operation, where the transistors are interconnected in parallel. This in turn allows for increased reliability, improved power handling capabilities and better thermal performance.

The UMB11NTN has a high breakdown voltage, making it suitable for high power applications such as power supplies, motor control and audio amplifiers. The built-in bias voltage enables the user to set the desired collector-base bias voltage, allowing for optimum performance. As this voltage is adjustable, it is also possible to control the current gain of the device, allowing the user to optimize the performance of the circuit.

The working principle of the UMB11NTN is based on the fact that each transistor has a separate collector and emitter. When a voltage is applied to the base of one transistor it will draw current from the base of the other transistor in order to maintain a balance current in the collector-emitter circuit. This ensures that the current drawn from the bases of the two transistors always remain equal. This process enables the transistor to maintain a constant current balance, allowing for improved reliability, better power handling capabilities and improved thermal efficiency.

The pre-biased nature of the UMB11NTN transistors makes them ideal for applications where the base voltage is limited. This is because the biasing voltage of the device is already set and need not be adjusted by the user. This in turn allows the user to easily set the optimal level of voltage to match the application requirements.

In addition to the pre-biased nature of the device, the UMB11NTN transistors also offer increased efficiency when used in high power applications. This is because the two transistors in the package are interconnected in parallel, which allows them to work together to increase the power handling capabilities of the device. This in turn allows the device to handle higher power levels than standard transistors, while still maintaining an efficient operation.

The UMB11NTN transistors are widely used in a variety of applications due to their high power rating and low collector-emitter voltage. They are particularly suitable for applications requiring a slight increase in performance over standard transistors and for applications where the base voltage is limited. The pre-biased nature of the device makes it easy for the user to set the desired bias voltage, allowing for improved performance and increased efficiency.

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