Allicdata Part #: | UMB1NTN-ND |
Manufacturer Part#: |
UMB1NTN |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS DUAL PNP UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | UMB1NTN Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04472 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | MB1 |
Supplier Device Package: | UMT6 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The UMB1NTN is a pre-biased, bipolar array ideal for a variety of applications. Typically found in CPUs, PCs, and consumer electronics, the UMB1NTN utilizes a simple but powerful emulation of MOSFETs to achieve a variety of semiconductor device function.
At its core, the UMB1NTN consists of a series of individual bipolar transistors connected in an array. Each of the two transistors has two emitters, two bases, and two collectors. The connection of the emitters to the base is used to create a junction transistor, while the connection of the collectors to the base creates an insulated gate bipolar transistor (IGBT).
The UMB1NTN operates by creating a voltage at the base of each of the two transistors. In addition, the UMB1NTN’s two collectors are connected to a pair of input devices, usually logic gates. As a result, the voltage at the base of each of the two transistors is transferred to the input devices, allowing for the UMB1NTN to be used as an analog voltage source. This voltage source can then be used to adjust the voltage or current of an output device.
The UMB1NTN’s IGBT configuration also offers several additional benefits. By using an IGBT instead of a MOSFET, the UMB1NTN is able to handle a much higher voltage at the base, which makes it ideal for high-current applications. Furthermore, the IGBT configuration also reduces power consumption, making the UMB1NTN more energy efficient than other similar devices.
In addition to acting as a voltage source, the UMB1NTN also offers a number of other useful features. One of the most popular features is the ability to convert digital signals into analog signals. By combining the two transistors in an array, the UMB1NTN is able to convert a digital signal into an analog voltage. This is incredibly useful for devices like sound cards, which require digital signals to be converted into analog signals.
The UMB1NTN’s pre-biased, bipolar array is also excellent for voltage-follower applications. By connecting the two transistors in an array, the UMB1NTN is able to create an exact replica of an input signal, allowing for perfect voltage-follower operation. This makes the UMB1NTN ideal for environments where accuracy and speed are paramount.
Overall, the UMB1NTN is a robust and versatile device that can be applied to a variety of applications. Thanks to its powerful IGBT configuration, the UMB1NTN is able to handle high voltages and currents while remaining energy efficient. In addition, the UMB1NTN’s ability to convert digital signals into analog signals, as well as its voltage-follower capabilities, make it ideal for use in various consumer electronics. For these reasons, the UMB1NTN has been a popular choice for many years and will likely remain so in the future.
The specific data is subject to PDF, and the above content is for reference
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