UMG11NTR Discrete Semiconductor Products |
|
Allicdata Part #: | UMG11NTR-ND |
Manufacturer Part#: |
UMG11NTR |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W UMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | UMG11NTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05358 |
6000 +: | $ 0.05061 |
15000 +: | $ 0.04614 |
30000 +: | $ 0.04316 |
75000 +: | $ 0.03969 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | *MG11 |
Supplier Device Package: | UMT5 |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UMG11NTR is a type of Arrays, Pre-Biased Bipolar Junction Transistor (BJT). It can be used in various applications, including power switching and analog power. This article will discuss its application field and working principle.
Application field
The UMG11NTR is a multi-transistor array designed for use as a switching device in a variety of applications requiring higher current ratings than the standard switching transistor array. In the power switching industry, the UMG11NTR is an inexpensive solution for hot-swap protection, power supply design, power conversion, motor control, and digital memory pre-charge.
In the analog domain, the UMG11NTR can be used for signal and power conditioning, signal gating, filtering, level shifting, and current sensing. Its on-chip current sensing allows for power control, current limiting, and over-current protection. Its integrated logic-level inputs allow for level shifting of logic signals for applications that require a higher voltage or power than the logic signal provides.
Working principle
The UMG11NTR consists of two integrated transistors connected in parallel. The transistors are not connected directly, but instead are connected via a variety of internal connections, including a current mirror circuit and a bias resistor network.
When the UMG11NTR is in an on-state, the current mirror circuit creates a parallel connection between the transistor\'s main current paths. This allows for higher current levels than with just a single transistor. The bias resistor network helps to reduce the power dissipation in the device and keeps the transistors at a consistent operating point.
When the UMG11NTR is in an off-state, the current mirror circuit blocks the current path between the two transistors and the bias resistors prevent any current from flowing through the device. This ensures that the transistors remain off until the UMG11NTR is triggered into an on-state.
Conclusion
The UMG11NTR is a type of pre-biased bipolar junction transistor array designed for a variety of applications. Its integrated logic-level inputs and on-chip current sensing allows for a variety of power switching and analog power functions. Its working principle is based on a current mirror and bias resistors network circuit configuration.
The specific data is subject to PDF, and the above content is for reference
TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...