UMG11NTR Allicdata Electronics

UMG11NTR Discrete Semiconductor Products

Allicdata Part #:

UMG11NTR-ND

Manufacturer Part#:

UMG11NTR

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W UMT5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UMG11NTR datasheetUMG11NTR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05358
6000 +: $ 0.05061
15000 +: $ 0.04614
30000 +: $ 0.04316
75000 +: $ 0.03969
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: *MG11
Supplier Device Package: UMT5
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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UMG11NTR is a type of Arrays, Pre-Biased Bipolar Junction Transistor (BJT). It can be used in various applications, including power switching and analog power. This article will discuss its application field and working principle.

Application field

The UMG11NTR is a multi-transistor array designed for use as a switching device in a variety of applications requiring higher current ratings than the standard switching transistor array. In the power switching industry, the UMG11NTR is an inexpensive solution for hot-swap protection, power supply design, power conversion, motor control, and digital memory pre-charge.

In the analog domain, the UMG11NTR can be used for signal and power conditioning, signal gating, filtering, level shifting, and current sensing. Its on-chip current sensing allows for power control, current limiting, and over-current protection. Its integrated logic-level inputs allow for level shifting of logic signals for applications that require a higher voltage or power than the logic signal provides.

Working principle

The UMG11NTR consists of two integrated transistors connected in parallel. The transistors are not connected directly, but instead are connected via a variety of internal connections, including a current mirror circuit and a bias resistor network.

When the UMG11NTR is in an on-state, the current mirror circuit creates a parallel connection between the transistor\'s main current paths. This allows for higher current levels than with just a single transistor. The bias resistor network helps to reduce the power dissipation in the device and keeps the transistors at a consistent operating point.

When the UMG11NTR is in an off-state, the current mirror circuit blocks the current path between the two transistors and the bias resistors prevent any current from flowing through the device. This ensures that the transistors remain off until the UMG11NTR is triggered into an on-state.

Conclusion

The UMG11NTR is a type of pre-biased bipolar junction transistor array designed for a variety of applications. Its integrated logic-level inputs and on-chip current sensing allows for a variety of power switching and analog power functions. Its working principle is based on a current mirror and bias resistors network circuit configuration.

The specific data is subject to PDF, and the above content is for reference

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