UMG1NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMG1NTR-ND |
Manufacturer Part#: |
UMG1NTR |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.3W UMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | UMG1NTR Datasheet/PDF |
Quantity: | 18000 |
3000 +: | $ 0.05358 |
6000 +: | $ 0.05061 |
15000 +: | $ 0.04614 |
30000 +: | $ 0.04316 |
75000 +: | $ 0.03969 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | *MG1 |
Supplier Device Package: | UMT5 |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UMG1NTR is a new type of transistor array that is pre-biased to provide high performance in applications that require variable speed and high switching rates. The transistor array has been designed to provide a solution that allows for flexibility in circuit design, while still providing low power consumption and high performance.
The UMG1NTR is a series transistor array with a single collector to provide high performance operation and low power consumption. The array contains an input stage that is pre-biased and a series of five output stages, each of which can be configured to provide a different output impedance and power rating. This array provides the flexibility to design for different applications and optimize performance for each.
The UMG1NTR is based on bipolar junction transistor (BJT) technology, which is the same technology used in most modern transistors. This type of transistor has two connections, the emitter and the base, which form an electrical junction between them. The current passing between the emitter and base is called the collector current. The base current is then able to control the collector current. This allows the transistor to be used to amplify signals, control voltage levels, and determine current flow.
The UMG1NTR has a bias voltage applied to the base of each transistor to ensure that the collector current is at an optimal level. This prevents any overloading or excessive power dissipation. The pre-biased transistors also provide faster switching times and improved response times, resulting in improved performance.
Due to its pre-biased design, the UMG1NTR can be used in a variety of applications. It is ideal for applications where higher speed operation is required, such as digital signal processing, video processing, and digital audio processing. It is also useful in power circuits where fast switching rates are needed.
The UMG1NTR is also suitable for use in analog circuits, such as amplifiers, oscillators, and filters. Many of the applications for which it is best suited require very low input and output power levels, which the pre-biased transistor is able to provide without the need for additional active components.
The pre-biased transistors also provide very low distortion, making them ideal for use in audio and video applications. Their low power consumption also reduces the overall system power requirement. The UMG1NTR is a highly-flexible solution that is able to provide performance for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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