UMT1N-TP Allicdata Electronics

UMT1N-TP Discrete Semiconductor Products

Allicdata Part #:

UMT1N-TPMSTR-ND

Manufacturer Part#:

UMT1N-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS 2PNP 50V 0.15A SOT363
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 15...
DataSheet: UMT1N-TP datasheetUMT1N-TP Datasheet/PDF
Quantity: 9000
3000 +: $ 0.05715
6000 +: $ 0.05398
15000 +: $ 0.04922
30000 +: $ 0.04604
Stock 9000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: UMT1N
Description

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The UMT1N-TP devices are a series of transistors that can be categorized as bipolar junction transistors (BJTs) arrays. This type of transistor is often used in applications that require high reliability and excellent voltage stability.

The UMT1N-TP series of transistors is ideal for use in a variety of fields. Some common application areas include telecommunications, automotive, industrial, and medical equipment. This series of devices is also known for its excellent power handling, high-current gain, and low-noise performance. These features make them suitable for use in a variety of applications that require robust performance.

The working principle of the UMT1N-TP series relies on the fact that the input current to a transistor is directly proportional to the output current. This means that by controlling the input current, the output current can be precisely regulated. In addition, this type of transistor offers excellent voltage stability which helps to keep the output current stable even when subjected to varying input voltages.

The basic configuration of a UMT1N-TP series device is composed of a P-type semiconductor material. This is connected to the emitter, which is then connected to the base. The collector is connected to the emitter and the output voltage is taken from the collector side. The gate is usually left open, but it can be used to vary the current-gain of the device.

The UMT1N-TP series of transistors is a great choice for applications requiring high reliability and excellent voltage stability. This device’s excellent power handling and low-noise performance make it suitable for a variety of applications, including telecommunications, automotive, industrial, and medical equipment.

The specific data is subject to PDF, and the above content is for reference

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