UPT17/TR7

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UPT17/TR7 is a type of two-terminal TVS diode with a typical reverse standoff voltage (VRRM) of 17 V. It is designed to protect against excessive noise and over-voltage conditions on infotainment and power access systems. It is ideal for preventing problems caused by overcharging and undercharging and offers high levels of protection against electrical transients, ESD, and EFT. This device is also suitable for use in industrial and commercial applications.

The UPT17/TR7 device is constructed using high-quality metal-oxide semiconductor (MOS) technology. Its surface-mount design is both reliable and cost-effective. In terms of its electrical characteristics, the device features a low breakdown voltage (Inrush Break Down Voltage, BVD) of 17 V, and a maximum peak pulse power dissipation of 170 W. It also has an IPP surge capability of 50 A/μs when a short test current pulse is applied.

In terms of its working principle, the UPT17/TR7 device utilizes a special "clamping" action to reduce any excessive voltage levels. Its MOS construction helps ensure that the device does not conduct (or "leak") DC current from the circuit, allowing it to effectively protect against overvoltages. In situations where an ESD or EFT event occurs, the UPT17/TR7 device will detect the voltage spikes and clamp them to the limiting voltage of 17 volts. This will help protect delicate components from being damaged due to overvoltages.

The UPT17/TR7 device is ideal for use in a wide range of applications, especially where it is important to protect sensitive circuits from transient voltage levels. It is well suited for use in automotive infotainment systems, commercial power access systems, industrial process control systems, medical equipment, and consumer electronics. It is an exceptionally robust device that can handle up to 50A/μs inrush current and transient voltage spikes of up to 17V. Therefore, it is an excellent choice for applications requiring higher levels of protection.

In conclusion, the UPT17/TR7 device is a type of two-terminal TVS diode designed to protect against transients, ESD, and EFT. It is constructed using MOS technology and has a low BVD of 17 V with a maximum peak pulse power dissipation of 170 W. Its special “clamping” action helps protect against overvoltages, making it ideal for use in many different applications, from automotive infotainment systems to medical equipment.

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