Allicdata Part #: | US6T4TR-ND |
Manufacturer Part#: |
US6T4TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 12V 3A TUMT6 |
More Detail: | Bipolar (BJT) Transistor PNP 12V 3A 280MHz 1W Surf... |
DataSheet: | US6T4TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 30mA, 1.5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 280MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | UMT6 |
Base Part Number: | US6T |
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Bipolar Junction Transistors (BJTs) are widely used in various applications. Among them is the US6T4TR, a single-transistor, high-power device. It is a type of NPN (or negative-positive-negative) transistor, which is the most common type. It is constructed of a weakly doped emitter, a moderately doped base and a strongly doped collector to form an N-type P-type N-type structure. Because it is composed of only two terminals, it is referred to as a ‘single-transistor’ device.
The US6T4TR is mainly used for switching applications, and functions as an amplifier by using the collector current to control the base current. This transistor amplifies the current in the collector-emitter junction, making it possible to increase the amount of current passing through the circuit and reduce the voltage drop in the collector-emitter junction, resulting in efficient switching. This is also known as ‘current transfer ratio’.
The US6T4TR can operate in several modes, depending on the circuit configuration and the input and output voltages. When the input voltage is lower than the base-emitter voltage (VBE), the transistor will act as a ‘leak’, allowing the emitter current to flow through the transistor with low resistance. This is known as the saturation mode. Alternatively, when the input voltage is between the base-emitter voltage and the collector-emitter voltage (VCE) of the transistor, the transistor will switch from saturation to enhance mode, allowing a much higher current in the collector-emitter junction. Finally, when the input voltage is above the collector-emitter voltage of the transistor, the transistor will switch from enhance to cutoff mode and will no longer allow current flow through the collector-emitter junction.
The US6T4TR is also ideal for amplification applications, as its current transfer ratio is up to 30. This allows a higher voltage to be amplified, resulting in a better performance than traditional transistors. As the transistor is designed for high-power applications, it can withstand high operating temperatures and heavy-duty operating conditions.
Due to its high current transfer ratio and wide operating range, the US6T4TR is widely used in sophisticated fields such as automotive, industrial, avionics and computer control systems. For example, in cars, the US6T4TR can be used to switch headlights, fog lamps and audio systems. In industrial settings, the US6T4TR is used to regulate various machine operations. In avionics, the US6T4TR is used to regulate the power of all electrical components in aircraft. It is also ideal for computer control systems, as it can accurately control the power consumption of the processor and peripherals.
In conclusion, the US6T4TR is a single-transistor, high-power transistor that is well-suited for switching and amplification applications. It offers high current transfer ratio and can operate in many modes depending on its input and output voltages. The US6T4TR is widely used in sophisticated industries such as automotive, industrial, avionics and computer control systems.
The specific data is subject to PDF, and the above content is for reference
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