Allicdata Part #: | US6T6TR-ND |
Manufacturer Part#: |
US6T6TR |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 30V 2A TUMT6 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 2A 360MHz 1W Surf... |
DataSheet: | US6T6TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15175 |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 200mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 360MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | TUMT6 |
Base Part Number: | US6T |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 50mA, 1A |
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Bipolar Junction Transistor (BJT) is a commonly used electronic device for amplifying or switching electrical signals. It is widely used in consumer and other electrical and electronic products of all kinds, including amplifying and switching devices, operational amplifiers, data converters and communication equipment. In this paper, we will discuss the application field and working principle of the US6T6TR, a particularly common type of BJT.
The US6T6TR is a three-terminal device, with the Collector (C), Base (B) and Emitter (E) connections. The Collector-Emitter voltage is up to 600V, making it suitable for high-voltage switching or amplification applications, or as a linear or broadband power amplifier. Its maximum multi-pulse Collector current is 6A, making it capable of being used in high power switching circuits, where it can be used to switch a large load current with low distortion and ringing. The device features an isolated Collector tab for improved creepage and insulation distance, and is also available with a stud mount base for easier assembly and temperature uniformity.
The US6T6TR is a NPN transistor and works by controlling the current flow across the Base-Emitter junction. When the Base-Emitter voltage VBE is increased, the Base current IB is increased and current flowing through the Collector-Emitter junction, IC, increases. Conversely, the Collector-Emitter current IC is decreased when the Base-Emitter voltage VBE is decreased. This is what gives the US6T6TR its switching and amplification capabilities. The ratio of the Collector current (IC) to the Base current (IB) is known as the current gain of the device and is usually denoted by the letter hFE. For example, the US6T6TR has an hFE of 60-980, meaning that for every 1mA increase in the Base current, the Collector current increases by 60-980mA.
The US6T6TR is mostly used for either low noise-amplifying or switching. It can be used as an amplifier in audio, video and RF signal processing applications, where it will work to strengthen the signal without adding excessive noise. It can also be used for switching, for example in power supplies, motor controls and in telecommunications. In these applications it is used to control the current and voltage of a load, quickly and with low distortion. It is possible to use the US6T6TR in other applications as well, such as level shifters or low frequency pulse width modulators.
In summary, the US6T6TR is a commonly used three-terminal device with a maximum Collector-Emitter voltage of 600V and a maximum multi-pulse Collector current of 6A. It is primarily used for either low noise-amplifying or switching applications, such as audio, video and RF signal processing, power supplies, motor controls and level shifters. Its current gain (hFE) is usually denoted by a ratio between 60-980.
The specific data is subject to PDF, and the above content is for reference
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