V10DM100C-M3/I Discrete Semiconductor Products

Series:	eSMP®, TMBS®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	5A
Voltage - Forward (Vf) (Max) @ If:	790mV @ 5A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 100V
Operating Temperature - Junction:	-40°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package:	TO-263AC (SMPD)

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V10DM100C-M3/I is a device belonging to the category of diodes and rectifiers and arrays. It is an integrated device which is designed to allow high voltage currents to be efficiently and safely transmitted across large distances where the source and destination of the current demands a high degree of power transfer. It is an integrated package that provides high-voltage protection and is suitable for high-power applications.The V10DM100C-M3/I is designed to be mounted on a printed circuit board and is encased within an insulated, high-temperature resistant material. The device has two terminals, one is the anode end of the device and the other is the cathode end.The V10DM100C-M3/I is a semiconductor rectifier array which is relatively simple to use and can handle a wide range of voltages and current ratings. The device consists of a three-phase rectifier array with ten rectifier channels. Each channel can provide up to 100A of current. The device is designed to be able to handle a wide range of voltage levels, up to 1000V RMS.The primary application field of the V10DM100C-M3/I is in the industrial sector. It is designed to be able to handle large peak currents, which can be used in various industrial applications such as AC motors, power supplies and generators. The device is also suitable for controlling the power demand of various other devices, such as computers, microcontrollers and sensors.The V10DM100C-M3/I also has applications in automotive and aerospace industries, where the device can be used to regulate the current flow across large distances where the source and destination of the current have a significantly different power requirements. The working principle of the V10DM100C-M3/I relies on the use of Schottky diodes, which are used to control the flow of current. When the forward voltage of the device is greater than the peak voltage, current can flow from the anode to the cathode and vice versa. The forward voltage of the device is determined by the voltage drop that occurs across the array, which allows for efficient and safe control of the current flow.The device also utilizes reverse-recovery charge control which reduces the amount of power needed to drive the device and also increases the efficiency of the device. When the device is used in the reverse polarity, the charge stored in the electrodes is forced to the cathode, resulting in the reduction of current flow until the original peak voltage is reached.In conclusion, the V10DM100C-M3/I is an efficient and reliable semiconductor rectifier array which is designed to provide efficient and safe control of large currents, in both forward and reverse polarities. It has a wide range of applications in the industrial, automotive and aerospace sectors, as it is designed to handle large peak currents and is also suitable for applications in other areas requiring high accuracy control of power. The use of Schottky diodes and reverse-recovery charge control further improves the device\'s efficiency and allows for more reliable and efficient operation of the device.

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