Allicdata Part #: | V10PM12HM3_A/I-ND |
Manufacturer Part#: |
V10PM12HM3_A/I |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 120V 3.9A TO277A |
More Detail: | Diode Schottky 120V 3.9A Surface Mount TO-277A (SM... |
DataSheet: | V10PM12HM3_A/I Datasheet/PDF |
Quantity: | 1000 |
6500 +: | $ 0.20879 |
Series: | Automotive, AEC-Q101, eSMP®, TMBS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 120V |
Current - Average Rectified (Io): | 3.9A |
Voltage - Forward (Vf) (Max) @ If: | 830mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 400µA @ 120V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Diodes - Rectifiers - Single
V10PM12HM3_A/I is a single-phase full-bridge rectifier module based on Infineon MOSFETs. It offers a fast and cost-effective solution for many applications, such as rectification and power factor correction.
Application Field
V10PM12HM3_A/I is particularly suitable for the rectification of some AC power source with frequency less than 600Hz and AC current up to 12A. It offers very high efficiency and low power loss, which is suitable for industrial control, high power factor rectification systems, autotransformer, motor drives and other motor-driven equipment.
Working Principle
V10PM12HM3_A/I use the MOSFETs as the main part. These MOSFETs are arranged by Infineon to form a bridge-based full-bridge rectifier. The power switch of each MOSFET is controlled by a driver and feedback signal. All these components work together to realize efficient and precise power conversion.
The MOSFETs switch at high frequency according to the voltage and current parameters. The voltage and current parameters of the power input are the main control factors of MOSFETs\' on-off state. During the whole process, the bridge-type full-bridge rectifier commits to reduce the harmonics of the input power.
In addition to the bridge-type full-bridge rectifier, a power factor correction device is also included in V10PM12HM3_A/I, which can provide a power factor correction rate of up to 99.5%. Generally, V10PM12HM3_A/I can be used safely under a number of different conditions.
Conclusion
In conclusion, V10PM12HM3_A/I is suitable for many applications, such as rectification and power factor correction. The main component of V10PM12HM3_A/I is its bridge-type full-bridge rectifier, which controls the high frequency switch of MOSFETs according to the voltage and current parameters of the power input. Moreover, the power factor correction device of V10PM12HM3_A/I can provide a power factor correction rate of up to 99.5%. Therefore, it can be used safely under a number of different conditions.
The specific data is subject to PDF, and the above content is for reference
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