V12P10HE3/86A Allicdata Electronics
Allicdata Part #:

V12P10HE3/86A-ND

Manufacturer Part#:

V12P10HE3/86A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 100V 12A TO277A
More Detail: Diode Schottky 100V 12A Surface Mount TO-277A (SMP...
DataSheet: V12P10HE3/86A datasheetV12P10HE3/86A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: eSMP®, TMBS®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 12A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: V12P10
Description

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The V12P10HE3/86A is a single rectifier diode designed to meet the needs of a variety of applications. This device offers a range of features and benefits that make it a great choice for many applications.

The V12P10HE3/86A is a low loss, low forward voltage drop diode, with a very high surge current capability and a fast switching speed. The device has an exceptionally low forward voltage drop, which translates into a lower power dissipation and higher efficiency. The device also offers an extremely low operating temperature, with a typical maximum rating of 85 degrees Celsius.

The V12P10HE3/86A is designed for use in a variety of applications, including rectification, AC/DC conversion, voltage regulation, and voltage protection. It can also be used in applications that require very high current surges, such as battery chargers and induction heating equipment. The diode is also suitable for use as a rectifier for low power DC to DC converters, as well as for current limiting and circuit protection in many electronic circuits.

The working principle of the V12P10HE3/86A is based on the principle of PN junction breakdown. When a reverse voltage is applied to the diode, the potential barrier between the P-type and N-type materials is overcome and current begins to flow. The diode then operates in its forward bias mode, allowing for a current to flow in one direction only.

The device also features an extremely low junction capacitance, which allows for a fast switching speed and less power dissipation. In addition, the diode has a variety of features that allow for a wide range of applications.

The V12P10HE3/86A is a popular choice for a variety of applications due to its excellent electrical characteristics and superior performance. The device is also an affordable option, providing excellent value for money. The device is suitable for use in a wide range of applications, including AC/DC conversion, voltage regulation, power switching, and current limiting.

The specific data is subject to PDF, and the above content is for reference

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