V12P8-M3/86A Allicdata Electronics
Allicdata Part #:

V12P8-M3/86A-ND

Manufacturer Part#:

V12P8-M3/86A

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 80V 4.3A TO277A
More Detail: Diode Schottky 80V 4.3A Surface Mount TO-277A (SMP...
DataSheet: V12P8-M3/86A datasheetV12P8-M3/86A Datasheet/PDF
Quantity: 1000
6000 +: $ 0.20549
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Series: Automotive, AEC-Q101, eSMP®, TMBS®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 4.3A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 12A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 80V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Diodes - Rectifiers - Single

V12P8-M3/86A application field and working principle

The V12P8-M3/86A is a 3-terminal, high-efficiency rectifier diode, which is most often encountered in applications needing low forward voltage drop, high surge current capabilities, and a high reverse breakdown voltage. Commonly found in the automotive industry, these components are highly reliable and can also be found in other industries, such as telecommunications and consumer electronics.

The V12P8-M3/86A operates by allowing a large current to flow in one direction and blocking the same current in the other, which allows it to be used to rectify AC or convert DC. The device can also be used to provide protection against polarity reversal and as a voltage clamp. The devices operate by using a reverse-bias depletion layer to allow the diode to operate as a rectifier, meaning that while it can handle large reverse currents, the device will still be able to block the voltage, allowing it to be used as a clamp.

The device’s working principle is based on the p-n junction, typically formed from a p-doped semiconductor and an n-doped semiconductor, which forms the rectifier region. The amount of voltage drop caused by the p-n junction will vary depending on the material used to construct it, and also has a direct correlation with the rate of current flow. In the V12P8-M3/86A, the voltage drop is approximately 0.6 Volts, which is slightly lower than that of other similar rectifier diodes.

The device proves to be an invaluable tool in a variety of industries, due to its ability to convert AC to DC, as well as its extremely low forward voltage drop and high surge current capabilities. It is especially valued in the automotive industry due to its ability to maintain a consistently low voltage drop, thus reducing power consumption. Furthermore, its high reverse breakdown voltage allows it to be used as a protection device and a voltage clamp, providing maximum protection against polarity reversal.

Overall, the V12P8-M3/86A is an extremely versatile and highly reliable rectifier diode, which is used to facilitate the conversion of AC to DC in a variety of industries. Its low forward voltage drop and its high surge current capabilities make it well-suited for applications requiring power consumption efficiency, and its high reverse breakdown voltage allows it to be used to provide protection from polarity reversal. This makes the device invaluable in the automotive and telecommunications industries, as well as a variety of other settings.

The specific data is subject to PDF, and the above content is for reference

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