Allicdata Part #: | V12P6-M3/87A-ND |
Manufacturer Part#: |
V12P6-M3/87A |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 60V 4.6A TO277A |
More Detail: | Diode Schottky 60V 4.6A Surface Mount TO-277A (SMP... |
DataSheet: | V12P6-M3/87A Datasheet/PDF |
Quantity: | 1000 |
6500 +: | $ 0.20549 |
Series: | Automotive, AEC-Q101, eSMP®, TMBS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 4.6A |
Voltage - Forward (Vf) (Max) @ If: | 610mV @ 12A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 2.9mA @ 60V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Diodes are two-terminal semiconductor devices that conduct current in only one direction. Rectifiers are specialized diodes used in power applications. The V12P6-M3/87A is a single rectifier diode that has been engineered to provide optimal power transfer in a variety of tough conditions.
The V12P6-M3/87A is a power diode optimized for use in high-current and high-voltage industrial and commercial applications. The device utilizes a wide range of materials and processes to reliably transfer power from input to output with minimal loss in a variety of environments. The metal-semiconductor junction of the device allows efficient transfer of power at high voltages and high currents, reducing the need for costly offline cooling.
The main component of the V12P6-M3/87A is a highly reliable bipolar junction transistor (BJT) with built-in protection. This allows the diode to operate over a wide voltage range of 6-1000V while still providing low leakage current. The BJT is designed to switch quickly and efficiently when a load is applied, reducing power losses associated with traditional linear devices. The diode\'s common-emitter configuration minimizes voltage losses to ensure optimal power transfer.
The V12P6-M3/87A\'s two-stage, symmetrical-wraparound gate-drive architecture provides optimized performance in both forward and reverse polarity, allowing for even power levels under reverse polarity conditions. This feature makes it highly reliable in the most challenging applications with long-term pulse modulation and extreme temperature changes. In addition, the device\'s high switching speed and low intra-switch leakage current minimize power dissipation for greater efficiency.
The construction of the V12P6-M3/87A is also robust. The diode is housed in a hermetically sealed, watertight, flame-retardant, heat-resistant ceramic casing, making it suitable for long-term use and protection from environmental factors. The rated surge-current rating of the device is Iq = 2500A, and it has a maximum junction temperature of TJmax = 175℃.
The applications of the V12P6-M3/87A include high-power switching, motor control, and large batteries that require extreme voltage and current transfer. It can also be used in power supplies, solar converters, invertors, alternators, and any other industrial or commercial application that requires high-voltage and high-current transfer from input to output.
The working principle of the V12P6-M3/87A is relatively simple. The device is designed to provide fast, efficient, and reliable switching and power transfer between input and output. Its two-stage, wrap-around gate drive architecture allows the device to efficiently and rapidly switch loads, dissipating minimal power while providing even current levels under reverse polarity conditions. The hermetically sealed ceramic casing protects the diode and helps to ensure reliable power transfer over its specified operating temperature range.
The specific data is subject to PDF, and the above content is for reference
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