VBT1045CBP-E3/8W Discrete Semiconductor Products

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1. FEATURES

    1. Trench MOS Schottky technology

    2. Low forward voltage drop, low power losses

    3. High efficiency operation

    4. Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

    5. TJ 200 °C max. in solar bypass mode application

2. Main features

3. MECHANICAL DATA

    1. Molding compound meets UL 94 V-0 flammability rating

    2. Base P/N-E3 - RoHS-compliant, commercial grade

    3. Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

    4. E3 suffix meets JESD 201 class 1A whisker test

    5. Polarity: as marked

    6. Mounting Torque: 10 in-lbs maximum

4. APPLICATIONS

     For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.

5. Electrical characteristics

6. Package overview