VI30120S-E3/4W

Series:	TMBS®
Packaging:	Tube
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	120V
Current - Average Rectified (Io):	30A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 30A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	500µA @ 120V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262AA
Operating Temperature - Junction:	-40°C ~ 150°C

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VI30120S-E3/4W Application Field and Working Principle

VI30120S-E3/4W belongs to the category of diodes-rectifiers-single. It is an ideal high-performance fast rectifier designed for use in energy-saving applications. It provides an extremely low forward voltage drop, outstanding reverse recovery times and excellent forward conduction capability. With its low forward voltage drop and low threshold characteristics, it provides designers with greater system efficiency, reducing total power consumption.The VI30120S-E3/4W consists of four 100V N-channel MOSFETS cascoded into a bridge rectifier network. It provides low reverse recovery times of 50 to 69ns, fast forward recovery of less than 20ns and low forward voltages of less than 200mV. It also features low on-state resistance and maximum current ratings of up to 12A. VI30120S-E3/4W is available in the popular Component-10.B4.1 footprint.The VI30120S-E3/4W is suitable for many energy-saving applications, such as power converters, power supplies, low-noise consumer electronics and motor control systems. It can be used in a variety of applications to reduce total power consumption, minimize input and output voltage losses, reduce EMI and improve system efficiency.This device has many advantages over traditional diodes. It provides low forward voltage drop, fast forward recovery times, low on-state loss and high breakdown voltage. It also offers excellent reverse recovery times, helping to reduce circuit losses and noise.The VI30120S-E3/4W is designed to be used in both AC and DC applications and operates at a temperature range from -55 to 150°C. It is also RoHS compliant and features an innovative package to maximize performance in a space constrained application environment.The working principle of this device is based on the use of N-channel MOSFETS cascode fundamental diodes for rectification. When the applied voltage reaches its breakdown or turn-on threshold, an electron-hole pair is formed, junction capacitance is charged, and the diode conducts current across the pn junction. This will allow the diode to block any reverse current.At the same time, the current will flow through the drain to source path of the MOSFET, which is then conducted through the MOSFET on-state resistance (RDS(on)) to the load. This reduces the overall forward conduction losses and improves system efficiency.The VI30120S-E3/4W is an ideal choice for a wide range of energy-saving applications and can help reduce input and output voltage losses, reduce EMI and improve system efficiency. It is a low-cost, high-efficiency recifier solution which offers low on-state losses, fast forward recovery times and low forward voltages.

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