VI30202C-M3/4W Allicdata Electronics
Allicdata Part #:

VI30202C-M3/4WGI-ND

Manufacturer Part#:

VI30202C-M3/4W

Price: $ 2.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 200V 30A TO262AA
More Detail: Diode Array 1 Pair Common Cathode Schottky 200V 15...
DataSheet: VI30202C-M3/4W datasheetVI30202C-M3/4W Datasheet/PDF
Quantity: 30
1 +: $ 1.81440
50 +: $ 1.53871
100 +: $ 1.33352
500 +: $ 1.13521
1000 +: $ 0.95740
Stock 30Can Ship Immediately
$ 2
Specifications
Series: TMBS®
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 250µA @ 200V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262AA
Description

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A thin-film rectifier is a rectangle shaped semiconductor device which is comprised of a substrate material, a rectifying material, and a wiring assembly (or frame). A thin-film rectifier is typically used for high-voltage applications and has low capacitance outputs. The thin-film rectifier is a type of rectifier diode which is used in applications where the rectifying material needs to be very thin. The VI30202C-M3/4W is a thin-film rectifier with a reverse voltage of 200V, forward voltage of 1.2V, and surge current rating of 4A.

The thin-film rectifier is primarily used in applications where a higher voltage is required and where the capacitance must be kept to a minimum. For example, these rectifiers are used in power supplies, power transformers, chargers, and other power-related applications. Thin-film rectifiers are also used in medical equipment, computer networks, and automotive systems.

The VI30202C-M3/4W thin-film rectifier utilizes a four-layer substrate to provide a low capacitance and low capacitance output. The four layers of the substrate consist of silicon dioxide, nitride, aluminum nitride, and aluminum. This rectifier also has an integrated circuit to offer superior forward recovery characteristics.

The working principle of a thin-film rectifier is relatively simple. When the forward bias voltage is applied to the anode of the rectifier, electrons are injected into the anode and holes are injected into the cathode of the rectifier. This causes majority carriers to move into the depletion region of the rectifier and minority carriers to move into the cathode, where they are swept away. Once the reverse bias voltage is applied to the anode, the majority carriers move into the depletion region again and the minority carriers move back into the cathode. This creates a low resistance path between the anode and the cathode, thereby allowing the current to flow.

The VI30202C-M3/4W thin-film rectifier is a cost-effective and reliable solution for high-voltage applications such as computer networks and automotive systems. Its four-layer substrate provides a low capacitance output, and its integrated circuit offers superior forward recovery characteristics. This rectifier provides a reliable and efficient solution for industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference

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